1PS66SB63
Table of contents
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1. Product profile
1.1 General description
Planar low capacitance Schottky barrier diodes encapsulated in ultra small SMD plastic
packages.
1.2 Features
■ Very low diode capacitance
■ Very low forward voltage
■ Ultra small SMD plastic packages.
1.3 Applications
■ Digital applications:
◆ Ultra high-speed switching
◆ Clamping circuits.
■ RF applications:
◆ Diode ring mixer
◆ RF detector
◆ RF voltage doubler.
1.4 Quick reference data
1PS66SB63; 1PS79SB63
5 V, 20 mA low C
d
Schottky barrier diodes
Rev. 02 — 3 December 2004 Product data sheet
Table 1: Product overview
Type number Package Configuration
Philips JEITA
1PS66SB63 SOT666 - triple isolated diode
1PS79SB63 SOD523 SC-79 single diode
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
continuous forward current - - 20 mA
V
R
continuous reverse voltage - - 5 V
C
d
diode capacitance V
R
= 0 V;
f = 1 MHz;
see
Figure 3
- 0.35 0.5 pF
9397 750 13846 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 3 December 2004 2 of 10
Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low C
d
Schottky barrier diodes
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
Table 3: Pinning
Pin Description Simplified outline Symbol
1PS66SB63 (SOT666)
1 anode (diode 1)
2 anode (diode 2)
3 anode (diode 3)
4 cathode (diode 3)
5 cathode (diode 2)
6 cathode (diode 1)
1PS79SB63 (SOD523)
1 cathode
[1]
2 anode
SOT666
123
456
6
1
5
2
4
3
sym046
12
Top view
sym001
12
Table 4: Ordering information
Type number Package
Name Description Version
1PS66SB63 - plastic surface mounted package; 6 leads SOT666
1PS79SB63 SC-79 plastic surface mounted package; 2 leads SOD523
Table 5: Marking codes
Type number Marking code
1PS66SB63 N4
1PS79SB63 T1
9397 750 13846 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 3 December 2004 3 of 10
Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low C
d
Schottky barrier diodes
5. Limiting values
6. Thermal characteristics
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
[2] Refer to SOT666 standard mounting conditions.
[3] Reflow soldering is the only recommended soldering method.
[4] Refer to SOD523 (SC-79) standard mounting conditions.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs;δ≤0.02.
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
continuous reverse voltage - 5 V
I
F
continuous forward current - 20 mA
T
j
junction temperature - 125 °C
T
amb
ambient temperature −65 +125 °C
T
stg
storage temperature −65 +150 °C
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT666
[2] [3]
- - 700 K/W
SOD523
[4]
- - 450 K/W
Table 8: Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage see Figure 1;
[1]
I
F
= 0.1 mA - 160 200 mV
I
F
= 1 mA - 240 300 mV
I
R
reverse current see Figure 2;
V
R
= 1 V - 0.4 1 µA
V
R
= 5 V - - 50 µA
C
d
diode
capacitance
V
R
= 0 V; f = 1 MHz;
see
Figure 3
- 0.35 0.5 pF
L
s
series inductance - 0.6 - nH
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