Philips 1PS59SB21 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D114
1PS59SB21
Schottky barrier diode
Product specification
Supersedes data of 1998 Jul 28
1999 May 05
Philips Semiconductors Product specification
Schottky barrier diode 1PS59SB21
FEATURES
• Ultra fast switching speed
• Low forward voltage
• Guard ring protected
DESCRIPTION
Planar Schottky barrier diode with an
integrated guard ring for stress
protection in an SC-59 small plastic
SMD package.
• Small SMD package.
APPLICATIONS
• High-speed switching
handbook, halfpage
• Voltage clamping
• Protection circuits.
Top view
Marking code: 21.
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
3
3
12
n.c.
MLC357
21
MSA314
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
I
FSM
T
stg
T
j
continuous reverse voltage
continuous forward current −
non-repetitive peak forward current
storage temperature
junction temperature
−
−
−65
−
40 V
200 mA
1A
+150 °C
125 °C
1999 May 05 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS59SB21
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
forward voltage see Fig.2
I
=10mA
F
= 100 mA
I
F
= 200 mA
I
F
reverse current VR= 30 V; note 1; see Fig.3
=30V;Tj= 100 °C; note 1; see Fig.3
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.4
= 300 µs; δ = 0.02.
p
− 300 mV
− 420 mV
− 550 mV
− 15
− 3
µA
mA
40 50 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Refer to SC-59 standard mounting conditions.
1999 May 05 3
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