Philips 1PS300 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D187
1PS300
High-speed double diode
Product specification
Supersedes data of 1996 Oct 04
1999 May 26
Philips Semiconductors Product specification
High-speed double diode 1PS300
FEATURES
• Very small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS300 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
very small rectangular SOT323
(SC-70) plastic SMD package.
21
3
Top view
Marking code: A3.
Fig.1 Simplified outline SOT323 (SC-70) and symbol.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 common anode
21
3
MAM082
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
V
I
RRM
R
F
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 80 V
continuous forward current single diode loaded; see Fig.2;
− 200 mA
note 1
double diode loaded; see Fig.2;
− 170 mA
note 1
I
FRM
I
FSM
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge
t=1µs − 4A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 300 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26 2
Philips Semiconductors Product specification
High-speed double diode 1PS300
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
=1mA 610 − mV
I
F
I
=10mA 740 − mV
F
=50mA − 1V
I
F
I
= 100 mA − 1.2 V
F
reverse current see Fig.4
V
=25V − 30 nA
R
=80V − 0.5 µA
V
R
V
=25V; Tj= 150 °C − 30 µA
R
V
=80V; Tj= 150 °C − 100 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.5 − 2pF
reverse recovery time when switched from IF= 10 mA to
− 4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.6
forward recovery voltage when switched from IF= 10 mA;
− 1.75 V
tr= 20 ns; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 200 K/W
thermal resistance from junction to ambient note 1 415 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26 3
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