Philips 1PS226 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D114

1PS226

High-speed double diode

Product specification
Supersedes data of April 1996

1996 Sep 03

Philips Semiconductors Product specification

High-speed double diode 1PS226

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 80 V

• Repetitive peak reverse voltage:
max. 85 V

• Repetitive peak forward current:
max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.
surface mounted circuits.

DESCRIPTION

The 1PS226 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.

21

3

Top view

Marking code: C3T.

Fig.1 Simplified outline (SC59) and symbol.

PINNING

PIN DESCRIPTION

1 anode
2 cathode
3 common connection

21

3

MAM083

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V
V
I

RRM
R

F

repetitive peak reverse voltage − 85 V
continuous reverse voltage − 80 V
continuous forward current single diode loaded; see Fig.2;

− 215 mA

note 1
double diode loaded; see Fig.2;

− 125 mA

note 1

I

FRM

I

FSM

repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge

t=1µs − 4A
t=1s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

=25°C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 03 2