DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
1PS193
High-speed diode
Product specification
Supersedes data of April 1996
1996 Sep 11
Philips Semiconductors Product specification
High-speed diode 1PS193
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
DESCRIPTION
The 1PS193 is a high-speed
switching diode, fabricated in planar
technology, and encapsulated in the
small plastic SMD SC59 package.
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
21
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
Top view
Marking code: F3T.
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PINNING
3
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
2
n.c.
3
1
MAM085
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 80 V
continuous forward current see Fig.2; note 1 − 215 mA
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge
t=1µs − 4A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 11 2