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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
1PS181
High-speed double diode
Product specification
Supersedes data of April 1996
1996 Sep 03
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Philips Semiconductors Product specification
High-speed double diode 1PS181
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS181 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small plastic SMD SC59 package.
21
3
Top view
Marking code: A3T.
Fig.1 Simplified outline (SC59) and symbol.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 common anode
21
3
MAM082
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
V
I
RRM
R
F
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 80 V
continuous forward current single diode loaded; see Fig.2;
− 215 mA
note 1
double diode loaded; see Fig.2;
− 125 mA
note 1
I
FRM
I
FSM
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge
t=1µs − 4A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 03 2