Philips 1PS10SB62 Technical data
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M3D891
BOTTOM VIEW
1PS10SB62
Schottky barrier diode
Product specification 2003 May 15
Philips Semiconductors Product specification
Schottky barrier diode 1PS10SB62
FEATURES
• Ultra high switching speed
• Very low capacitance
• High breakdown voltage
DESCRIPTION
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
ESD sensitive device, observe handling precautions.
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm2 (approx. 10% of SOT23)
handbook, halfpage
• Power dissipation comparable to SOT23.
APPLICATIONS
Bottom view
MDB391
• Ultra high-speed switching
• High frequency applications
Marking code: S1.
The marking bar indicates the cathode.
• Mobile communication,digital (still) cameras, PDAs and
PCMCIA cards.
Fig.1 Simplified outline (SOD882) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage − 40 V
continuous forward current − 20 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
forward voltage IF= 2 mA; see Fig.2; note 1 800 mV
reverse current VR= 40 V; see Fig.3; note 1 1 µA
diode capacitance VR= 0 V; f = 1 MHz; see Fig.4 0.6 pF
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
2003 May 15 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS10SB62
GRAPHICAL DATA
10
handbook, halfpage
I
F
(mA)
MDB388
0
(2)
(1)
−1
10
−2
10
(3)
VF (V)
(1) T
(2) T
(3) T
amb
amb
amb
= 125 °C.
=85°C.
=25°C.
Fig.2 Forward current as a function of forward
voltage; typical values.
4
10
handbook, halfpage
I
R
(nA)
3
10
2
10
(1)
(2)
MDB389
10
(3)
0
−1
2.00.0 0.4 0.8 1.2 1.6
10
(1) T
(2) T
(3) T
amb
amb
amb
= 125 °C.
=85°C.
=25°C.
VR (V)
401003020
Fig.3 Reverse current as a function of reverse
voltage; typical values.
0.4
handbook, halfpage
C
d
(pF)
MDB390
0.36
0.32
0.28
0.24
0.2
01020 40
f = 1 MHz; T
amb
=25°C.
30
VR (V)
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 May 15 3
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