Philips 1N914B, 1N914A, 1N914 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D176
1N914
High-speed diode
Product specification
Supersedes data of 1996 Sep 03
1999 May 26
Philips Semiconductors Product specification
High-speed diode 1N914
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
DESCRIPTION
The 1N914 is a high-speed switching diode fabricated in planar technology, and
encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 100 V
• Repetitive peak forward current:
handbook, halfpage
k
a
MAM246
max. 225 mA.
The diode is type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 100 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 75 mA
repetitive peak forward current − 225 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +200 °C
junction temperature − 175 °C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 26 2
Philips Semiconductors Product specification
High-speed diode 1N914
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage IF= 10 mA; see Fig.3 1 V
reverse current see Fig.5
V
=20V 25 nA
R
=75V 5 µA
V
R
V
=20V; Tj= 150 °C50µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 4 pF
reverse recovery time when switched from IF= 10 mA to
8ns
IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7
when switched from I
= 10 mA to
F
4ns
IR= 60 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 50 mA; tr= 20 ns;
2.5 V
see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 26 3
Loading...