Philips 1N827A, 1N827, 1N829, 1N825A, 1N825 Datasheet
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DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D050
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1N821 to 1N829 |
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1N821A to 1N829A |
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Voltage reference |
diodes |
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Product specification |
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1996 Mar 20 |
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Supersedes data of March 1991 |
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Philips Semiconductors |
Product specification |
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Voltage reference diodes
1N821 to 1N829 1N821A to 1N829A
FEATURES
∙Temperature compensated
∙Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V)
∙Low temperature coefficient range: max. 0.0005 to 0.01 %/K.
APPLICATION
∙Voltage reference sources in measuring instruments such as digital voltmeters.
DESCRIPTION
Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package.
k |
a |
MAM216
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
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CONDITIONS |
MIN. |
MAX. |
UNIT |
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IZ |
working current |
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50 |
mA |
Ptot |
total power dissipation |
Tamb = 50 °C |
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400 |
mW |
Tstg |
storage temperature |
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−65 |
+200 |
°C |
Tj |
junction temperature |
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− |
200 |
°C |
Tamb |
operating ambient temperature |
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−55 |
+100 |
°C |
1996 Mar 20 |
2 |
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