DISCRETE SEMICONDUCTORS
DATA SH EET
halfpage
M3D050
1N821 to 1N829
1N821A to 1N829A
Voltage reference diodes
Product specification
Supersedes data of March 1991
1996 Mar 20
Philips Semiconductors Product specification
Voltage reference diodes
1N821 to 1N829
1N821A to 1N829A
FEATURES
• Temperature compensated
• Reference voltage range:
5.89 to 6.51 V (typ. 6.20 V)
• Low temperature coefficient range:
max. 0.0005 to 0.01 %/K.
APPLICATION
• Voltage reference sources in
measuring instruments such as
digital voltmeters.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
Z
P
tot
T
stg
T
j
T
amb
working current − 50 mA
total power dissipation T
storage temperature −65 +200 °C
junction temperature − 200 °C
operating ambient temperature −55 +100 °C
DESCRIPTION
Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass
package.
handbook, halfpage
k
a
MAM216
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
=50°C − 400 mW
amb
1996 Mar 20 2