![](/html/73/735e/735e0e75a34098d98d2225f44878685054fb49ae07a0aeee5e41b6f9f859361f/bg1.png)
DISCRETE SEMICONDUCTORS
DATA SH EET
halfpage
M3D050
1N821 to 1N829
1N821A to 1N829A
Voltage reference diodes
Product specification
Supersedes data of March 1991
1996 Mar 20
![](/html/73/735e/735e0e75a34098d98d2225f44878685054fb49ae07a0aeee5e41b6f9f859361f/bg2.png)
Philips Semiconductors Product specification
Voltage reference diodes
1N821 to 1N829
1N821A to 1N829A
FEATURES
• Temperature compensated
• Reference voltage range:
5.89 to 6.51 V (typ. 6.20 V)
• Low temperature coefficient range:
max. 0.0005 to 0.01 %/K.
APPLICATION
• Voltage reference sources in
measuring instruments such as
digital voltmeters.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
Z
P
tot
T
stg
T
j
T
amb
working current − 50 mA
total power dissipation T
storage temperature −65 +200 °C
junction temperature − 200 °C
operating ambient temperature −55 +100 °C
DESCRIPTION
Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass
package.
handbook, halfpage
k
a
MAM216
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
=50°C − 400 mW
amb
1996 Mar 20 2