Philips 1N5819, 1N5818 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
page
M3D119
1N5817; 1N5818; 1N5819
Schottky barrier diodes
Product specification
Supersedes data of April 1992
1996 May 03
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
FEATURES
• Low switching losses
• Fast recovery time
• Guard ring protected
• Hermetically sealed leaded glass
package.
APPLICATIONS
• Low power, switched-mode power
supplies
• Rectifying
• Polarity protection.
DESCRIPTION
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar
technology, and encapsulated in SOD81 hermetically sealed glass packages
incorporating Implotec
(1) Implotec is a trademark of Philips.
handbook, 4 columns
TM(1)
technology.
ak
MAM218
Fig.1 Simplified outline (SOD81) and symbol.
1996 May 03 2
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
RSM
V
RRM
V
RWM
I
F(AV)
I
FSM
T
stg
T
j
continuous reverse voltage
1N5817
1N5818
1N5819
non-repetitive peak reverse voltage
1N5817
1N5818
1N5819
repetitive peak reverse voltage
1N5817
1N5818
1N5819
crest working reverse voltage
1N5817
1N5818
1N5819
average forward current
=55°C; R
T
amb
note 1; V
R(equiv)
= 100 K/W;
th j-a
= 0.2 V; note 2
non-repetitive peak forward current t = 8.3 ms half sine wave;
JEDEC method;
Tj=T
prior to surge: VR=0
j max
storage temperature
junction temperature
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
20 V
30 V
40 V
24 V
36 V
48 V
20 V
30 V
40 V
20 V
30 V
40 V
1A
25 A
+175 °C
125 °C
Notes
1. Refer to SOD81 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
PR and I
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
R
rating will be available on request.
F(AV)
1996 May 03 3
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