Philips 1N5266B, 1N5265B, 1N5264B, 1N5263B, 1N5261B Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D176

1N5225B to 1N5267B

Voltage regulator diodes

Product specification
Supersedes data of April 1992

1996 Apr 26

Philips Semiconductors Product specification

Voltage regulator diodes 1N5225B to 1N5267B

FEATURES

• Total power dissipation:
max. 500 mW

• Tolerance series: ±5%

DESCRIPTION

Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.

The series consists of 43 types with nominal working voltages from 3.0 to 75 V.

• Working voltage range:
nom. 3.0 to 75 V

• Non-repetitive peak reverse power
dissipation: max. 40 W.

handbook, halfpage

APPLICATIONS

ka

MAM239

• Low-power voltage stabilizers or
voltage references.

The diodes are type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

F

I

ZSM

P

tot

continuous forward current − 250 mA
non-repetitive peak reverse current tp= 100 µs; square wave;

Tj=25°C prior to surge

total power dissipation T

=50°C; lead length max.;

amb

see Table
“Per type”

− 400 mW

note 1
Lead length 8 mm; note 2 − 500 mW

P

ZSM

non-repetitive peak reverse power
dissipation

tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.3

t

= 8.3 ms; square wave;

p

− 40 W

− 10 W

Tj≤ 55 °C prior to surge

T

stg

T

j

storage temperature −65 +200 °C
junction temperature −65 +200 °C

Notes

1. Device mounted on a printed circuit-board without metallization pad.

2. Tie-point temperature ≤ 75 °C.

ELECTRICAL CHARACTERISTICS
Table 1

=25°C; unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

forward voltage IF= 200 mA; see Fig.4 1.1 V

1996 Apr 26 2

1996 Apr 26 3

Per type

=25°C; unless otherwise specified.

T

j

Philips Semiconductors Product specification

Voltage regulator diodes 1N5225B to 1N5267B

TYPE No.

WORKING

VOLTAGE

(1)

(V)

V

Z

at I

Ztest

DIFFERENTIAL

RESISTANCE

(Ω)

r

dif

at I

Ztest

TEMP. COEFF.

(%/K)

S

Z

(2)

at I

Z

TEST

CURRENT

(mA)

I

Ztest

DIODE CAP.

Cd(pF)

at f = 1 MHz;

at VR=0V

NOM. MAX. MAX. MAX. MAX. MAX.

REVERSE CURRENT

at REVERSE

VOLTAGE

IR (µA)

V

R

(V)

NON-REPETITIVE PEAK

REVERSE CURRENT

tp= 100 µs; T

1N5225B 3.0 1600 −0.075 20 450 50 1.0 6.0
1N5226B 3.3 1600 −0.070 20 450 25 1.0 6.0
1N5227B 3.6 1700 −0.065 20 450 15 1.0 6.0
1N5228B 3.9 1900 −0.060 20 450 10 1.0 6.0
1N5229B 4.3 2000 ±0.055 20 450 5 1.0 6.0
1N5230B 4.7 1900 ±0.030 20 450 5 1.5 6.0
1N5231B 5.1 1600 ±0.030 20 300 5 2.0 6.0
1N5232B 5.6 1600 +0.038 20 300 5 3.0 6.0
1N5233B 6.0 1600 +0.038 20 300 5 3.5 6.0
1N5234B 6.2 1000 +0.045 20 200 5 4.0 6.0
1N5235B 6.8 750 +0.050 20 200 3 5.0 6.0
1N5236B 7.5 500 +0.058 20 150 3 6.0 4.0
1N5237B 8.2 500 +0.062 20 150 3 6.5 4.0
1N5238B 8.7 600 +0.065 20 150 3 6.5 3.5
1N5239B 9.1 600 +0.068 20 150 3 7.0 3.0
1N5240B 10 600 +0.075 20 90 3 8.0 3.0
1N5241B 11 600 +0.076 20 85 2 8.4 2.5
1N5242B 12 600 +0.077 20 85 1 9.1 2.5
1N5243B 13 600 +0.079 9.5 80 0.5 9.9 2.5
1N5244B 14 600 +0.082 9.0 80 0.1 10.0 2.0
1N5245B 15 600 +0.082 8.5 75 0.1 11.0 2.0
1N5246B 16 600 +0.083 7.8 75 0.1 12.0 1.5
1N5247B 17 600 +0.084 7.4 75 0.1 13.0 1.5
1N5248B 18 600 +0.085 7.0 70 0.1 14.0 1.5
1N5249B 19 600 +0.086 6.6 70 0.1 14.0 1.5
1N5250B 20 600 +0.086 6.2 60 0.1 15.0 1.5

I

ZSM

(A)

amb

=25°C