Philips 1N5062, 1N5060 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D116

1N5059 to 1N5062

Controlled avalanche rectifiers

Product specification

1996 Jun 19

Supersedes data of April 1992

File under Discrete Semiconductors, SC01

Philips Semiconductors	Product specification
Controlled avalanche rectifiers	1N5059 to 1N5062

FEATURES

∙Glass passivated

∙High maximum operating temperature

∙Low leakage current

∙Excellent stability

∙Guaranteed avalanche energy absorption capability

∙Available in ammo-pack.

LIMITING VALUES

	DESCRIPTION	This package is hermetically sealed
	Rugged glass package, using a high	and fatigue free as coefficients of
		expansion of all used parts are
	temperature alloyed construction.
		matched.
	k	a
		MAM047

Fig.1 Simplified outline (SOD57) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage
	1N5059		−	200	V
	1N5060		−	400	V
	1N5061		−	600	V
	1N5062		−	800	V
VRWM	crest working reverse voltage
	1N5059		−	200	V
	1N5060		−	400	V
	1N5061		−	600	V
	1N5062		−	800	V
VR	continuous reverse voltage
	1N5059		−	200	V
	1N5060		−	400	V
	1N5061		−	600	V
	1N5062		−	800	V
IF(AV)	average forward current	Ttp = 45 °C;	−	2.0	A
		lead length = 10 mm;
		averaged over any 20 ms
		period; see Figs 2 and 4
		Tamb = 80 °C; PCB mounting	−	0.8	A
		(see Fig.9); averaged over any
		20 ms period; see Figs 3 and 4
IFSM	non-repetitive peak forward current	t = 10 ms half sinewave	−	50	A
ERSM	non-repetitive peak reverse avalanche	L = 120 mH; Tj = Tj max prior to	−	20	mJ
	energy	surge; inductive load switched off
Tstg	storage temperature		−65	+175	°C
Tj	junction temperature	see Fig.5	−65	+175	°C

1996 Jun 19

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Philips Semiconductors						Product specification
Controlled avalanche rectifiers				1N5059 to 1N5062
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL	PARAMETER	CONDITIONS	MIN.		TYP.		MAX.	UNIT
VF	forward voltage	IF = 1 A; Tj = Tj max; see Fig.6	-		-		0.8	V
		IF = 1 A; see Fig.6	-		-		1.0	V
V(BR)R	reverse avalanche	IR = 0.1 mA
	breakdown voltage
	1N5059		225		-		-	V
	1N5060		450		-		-	V
	1N5061		650		-		-	V
	1N5062		900		-		-	V
IR	reverse current	VR = VRRMmax; see Fig.7	-		-		1	mA
		VR = VRRMmax; Tj = 165 °C; see Fig.7	-		-		150	mA
trr	reverse recovery time	when switched from IF = 0.5 A to IR = 1 A;	-		3		-	ms
		measured at IR = 0.25 A; see Fig.10
Cd	diode capacitance	VR = 0 V; f = 1 MHz; see Fig.8	-		50		-	pF

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-tp	thermal resistance from junction to tie-point	lead length = 10 mm	46	K/W
Rth j-a	thermal resistance from junction to ambient	note 1	100	K/W

Note

1.Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ³40 mm, see Fig.9. For more information please refer to the “General Part of Handbook SC01”.

1996 Jun 19

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