Philips 1N5062, 1N5060 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
1N5059 to 1N5062
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 Jun 19
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
ka
• Excellent stability
• Guaranteed avalanche energy
2/3 page (Datasheet)
MAM047
absorption capability
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
V
RWM
crest working reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
V
R
continuous reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
I
F(AV)
average forward current Ttp=45°C;
− 2.0 A
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
=80°C; PCB mounting
amb
− 0.8 A
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
I
FSM
E
T
T
RSM
stg
j
non-repetitive peak forward current t = 10 ms half sinewave − 50 A
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 20
mJ
storage temperature −65 +175 °C
junction temperature
see Fig.5
−65 +175 °C
1996 Jun 19 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
forward voltage
reverse avalanche
I
=1A; Tj=T
F
= 1 A; see Fig.6
I
F
IR= 0.1 mA
; see Fig.6
j max
−−0.8 V
−−1.0 V
breakdown voltage
1N5059 225 −−V
1N5060 450 −−V
1N5061 650 −−V
1N5062 900 −−V
reverse current
reverse recovery time
V
R=VRRMmax
V
R=VRRMmax
; see Fig.7
; Tj= 165 °C; see Fig.7
when switched from I
=0.5AtoIR=1A;
F
−−1µA
−−150 µA
− 3 −
µs
measured at IR= 0.25 A; see Fig.10
diode capacitance
V
= 0 V; f = 1 MHz; see Fig.8
R
− 50 −
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of Handbook SC01”
.
1996 Jun 19 3
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