Philips 1N5061, 1N5059 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
1N5059 to 1N5062
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
1996 Jun 19
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
FEATURES
• Glass passivated
• High maximum operating
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
temperature
• Low leakage current
ka
• Excellent stability
• Guaranteed avalanche energy
2/3 page (Datasheet)
MAM047
absorption capability
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
V
RWM
crest working reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
V
R
continuous reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
I
F(AV)
average forward current Ttp=45°C;
− 2.0 A
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
=80°C; PCB mounting
amb
− 0.8 A
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
I
FSM
E
T
T
RSM
stg
j
non-repetitive peak forward current t = 10 ms half sinewave − 50 A
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj=T
j max
prior to
surge; inductive load switched off
− 20
mJ
storage temperature −65 +175 °C
junction temperature
see Fig.5
−65 +175 °C
1996 Jun 19 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
forward voltage
reverse avalanche
I
=1A; Tj=T
F
= 1 A; see Fig.6
I
F
IR= 0.1 mA
; see Fig.6
j max
−−0.8 V
−−1.0 V
breakdown voltage
1N5059 225 −−V
1N5060 450 −−V
1N5061 650 −−V
1N5062 900 −−V
reverse current
reverse recovery time
V
R=VRRMmax
V
R=VRRMmax
; see Fig.7
; Tj= 165 °C; see Fig.7
when switched from I
=0.5AtoIR=1A;
F
−−1µA
−−150 µA
− 3 −
µs
measured at IR= 0.25 A; see Fig.10
diode capacitance
V
= 0 V; f = 1 MHz; see Fig.8
R
− 50 −
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”
.
1996 Jun 19 3
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