PANJIT ER1E, ER1C, ER1B, ER1J, ER1D Datasheet

ER1A THRU ER1J

FEATURE

S

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC

S

SYMBOLSER1AER1BER1CER1DER1EER1GER1JUNIT

S

RRM

50100150200300400600Volts

RMS

3570105140210280420Volt

s

D

C

50100150200300400600Volts

(AV

)

s

FSM

s

F

R

R

R

J

P

W

STG

SMB/DO-214A

A

SURFACE MOUNT SUPERFA ST RECTIFIER

VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere

l

For surface mounted applications

l

Low profile package

l

Built-in strain relief

l

Easy pick and place

l

Superfast recovery times for high efficiency

l

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

l

Glass passivated junction

l

High temperature soldering:

260¢J/10 seconds at terminals

Case: JEDEC DO-214AA molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram

Ratings at 25¢J ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Maximum Recurrent Peak Reverse Voltage V
Maximum RMS Voltage V
Maximum DC Blocking Voltage V
Maximum Average Forward Rectified Current,

I

1.0 Amp

at TL=100 ¢J
Peak Forward Surge Current 8.3ms single half sine-

I

30.0 Amp
wave superimposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A V
Maximum DC Reverse Current TA=25

¢J

At Rated DC Blocking Voltage TA=100 ¢J
Maximum Reverse Recovery Time (Note 1) T
Typical Junction capacitance (Note 2) C

I

0.95 1.25 1.7 Volts

5.0

£g

100

35.0 nS

10.0
Typical Thermal Resistance (Note 3) R £KJL 34 ¢J/

Operating and Storage Temperature Range TJ,T

-50 to +150 ¢J

NOTES:

1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A

2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts

3. 8.0mm2 (.013mm thick) land areas

A

F

RATING AND CHARACTERISTIC CURVES

NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms

SET TIME

BASE FOR 50 ns/c

m

SINGLE PHASE HALF WAVERESISTIVE OR INDUCTIVEP.C.B MOUNTED ON0.315×0.315"(8.0×8.0mm)PAD AREA

S

¢J

TJ = 12

5

% OF PIV. VOLTS

ER1EER1AER1JTJ = 25

INSTANTANEOUS FORWARD VOLTAGE VOLTS

8.3ms SINGLE HALF SINE WAVEJEDEC METHOD

NUMBER OF CYCLES AT 60Hz

TJ = 25¢Jf = 1.0MHzVsig = 50mVp-p REVERSE VOLTAGE, VOLT

S

I

PE

ER1A THRU ER1J

t

+0.5A

0

-0.25

-1.0

rr

1cm

Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND

TEST CIRCUIT DIAGRAM

1000

100

10

TJ = 75

¢J

¢J

2.0

1.0

CURRENT AMPERES

AVERAGE FORWARD

25 50 75 100

125

150

175

LEAD TEMPERATURE,

Fig. 2-MAXIMUM AVERAGE FORWARD

CURRENT RATING

10

1

0.1

¢J

1

TJ = 25¢J

R-REVERSE LEAKAGE CURRENT, MICROAMPERES

0.1
20 40 60 80 100 120

0.01

INSTANTANEOUS FORWARD CURRENT AMPERES

0.001

0.2 0.4 0.6 0.8 1.0 1.2 1.4

Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS

30

25

20

15

10

5

AK FORWARD SURGE CURRENT, AMPERES

1 2 5 10 20 50 100

Fig. 5-MAXIMUM NON-REPETITIVE SURGE

14

12

10

8.0

6.0

4.0

2.0

JUNCTION CAPACITANCE, pF

.1 1 10 100

Fig. 6-TYPICAL JUNCTION CAPACITANCE

CURRENT