Panjit 2N7002W Schematic [ru]
2N7002W
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R
, VGS@10V,IDS@500mA=5Ω
DS(ON)
• R
, VGS@4.5V,IDS@75mA=7.5Ω
DS(ON)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0002 ounces, 0.005 grams
• Marking : 72W
SOT-323
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
Gate
Drain
Source
0.044(1.10)
0.035(0.90)
Unit inch(mm)：
0.004(0.10)MIN.
0.087(2.20)
0.078(2.00)
0.006(0.15)
0.002(0.05)
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
RETEMARAPlobmyStimiLstinU
egatloVecruoS-niarD V
egatloVecruoS-etaG V
tnerruCniarDsuounitnoC I
)1
tnerruCniarDdesluP
noitapissiDrewoPmumixaM
2
)detnuomBCP(ecnatsiseRlamrehTtneibmAot-noitcnuJ
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
T
52=OC
A
TA57=OC
egnaRerutarepmeTegarotSdnanoitcnuJgnitarepO T
I
P
JT,GTS
R
SD
SG
D
MD
D
θ AJ
06V
+ 02V
511Am
008Am
002
021
051+ot55-
526
Wm
O
C
O
W/C
PAGE . 1STAD-JUL.26.2007
2N7002W
ELECTRICAL CHARACTERISTICS
retemaraPlobmySnoitidnoCtseT.niM.pyT.xaMstinU
citatS
egatloVnwodkaerBecruoS-niarDVB
egatloVdlohserhTetaGV
ecnatsiseRetatS-nOecruoS-niarDR
SSD
)ht(SG
)no(SD
V
VSDV=SGI,
V
I,V0=
SG
SG
Au01=06--V
D
Au052=1-5.2V
D
I,V5.4=
Am57=--5.7
D
Ω
ecnatsiseRetatS-nOecruoS-niarDR
tnerruCniarDegatloVetaGoreZI
egakaeLydoBetaGI
ecnatcudnocsnarTdrawroFg
)no(SD
SSD
SSG
Sf
V
SG
V
VSG=+ V,V02
V
SD
I,V01=
Am005=--5
D
V,V06=
SD
V0=--1Au
SG
V0=--+001An
SD
I,V51=
Am052=002--Sm
D
cimanyD
egrahCetaGlatoTQ
egrahCniarD-etaGQ
emiTyaleDnO-nruTt
emiTyaleDffO-nruTt
g
sg
dg
no
ffo
V
I
D
I,V51=
SD
V
SG
V
DD
R
G
V,Am005=
D
01= Ω
Am005=
V5.4=
R,V01=
02= Ω
L
V01=
NEG
-6.07.0
-1.0-
CnegrahCecruoS-etaGQ
-80.0-
-951
sn
-1262
ecnaticapaCtupnIC
ecnaticapaCrefsnarTesreveRC
ssi
sso
ssr
V
V,V52=
SD
V0=
SG
HM0.1=f
Z
edoiDniarD-ecruoS
---052Am
V,Am052=
V0=-39.02.1V
SG
Switching
tnerruCdrawroFedoiD.xaMI
egatloVdrawroFedoiDV
s
DS
I
S
V
DD
Test Circuit
R
V
IN
R
G
L
V
OUT
--05
--52
--5
Gate Charge
Test Circuit
1mA
FpecnaticapaCtuptuOC
V
DD
R
V
GS
R
G
L
PAGE . 2STAD-JUL.26.2007
2N7002W
Typical Characteristics Curves (T =25 C,unless otherwise noted)
1.2
V = 10V ~ 6.0V
GS
1
0.8
0.6
0.4
0.2
- Drain-to-Source Current (A)
D
I
0
012345
O
A
5.0V
4.0V
3.0V
VDS- Drain-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
5
W
4
1.2
V =10V
DS
V =10V
DS
V =10V
DS
1
0.8
0.6
0.4
0.2
- Drain Source Current (A)
D
I
0
0123456
O
T =25 C
J
VGS- Gate-to-Source Voltage (V)
FIG.2- Transfer Characteristic
10
W
8
I =500mA
D
3
2
1
DS(ON)
R - On-Resistance ( )
0
V =4.5V
GS
V =10V
GS
0 0.2 0.4 0.6 0.8 1 1.2
ID- Drain Current (A)
FIG.3- On Resistance vs Drain Current
2
V =10V
GS
1.8
I =500mA
D
1.6
1.4
1.2
1
0.8
- On-Resistance( Normalized)
0.6
DS(ON)
R
0.4
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature (oC)
6
O
T =125 C
4
2
DS(ON)
R - On-Resistance ( )
0
2345678910
V
GS
J
O
T =25 C
J
- Gate -t o-Sour ce Voltage (V )
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
PAGE . 3STAD-JUL.26.2007
Loading...