Panjit 2N7002KTB Schematic

2N7002KTB

0.013(0.33)0.009(0.23

)

0. 024 (0. 60)

0. 019 (0. 50)

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES

• R

, VGS@10V,IDS@500mA=3

DS(ON)

• R

, VGS@4.5V,IDS@200mA=4

DS(ON)

• Advanced Trench P rocess Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

MECHANICAL DATA

• Case: SOT-523 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx. Weight: 0.00007 ounces, 0.002 grams

• Marking : 27

0.0 52(1. 30)

0.0 43(1. 10)

0.0 67(1. 70)

0.0 59(1. 50)

0. 012 (0. 30)

0. 004 (0. 10)

0.0 44(1 .10)

0.0 35(0 .90)

0.0 67(1 .70 )

0.0 07(0. 17)

0.0 02(0. 07)

0.0 59(1 .50 )

Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )

PA RA ME TE R S ymb o l Li m i t Uni ts

D r a i n - S o ur c e V o l t a g e V

Ga t e - S o u r c e Volta g e V

C o nt i nuo us D ra i n C ur r e nt I

P u ls e d D r a i n C u r r e nt

Ma xi mu m P o we r Di ss i pa t i o n

1)

TA=2 5OC TA=7 5OC

Op e r a ti ng J un c t i on a nd St o ra g e Temp e r ature Ra n g e TJ,T

Junction-to Ambient Thermal Resistance(PCB mounted)

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

2

DS

GS

D

I

D M

P

D

ST G

R

J A

-5 5 t o + 15 0

6 0 V

+2 0 V

11 5 mA

8 0 0 mA

2 0 0 1 5 0

8 8 3

mW

O

C / W

C

PAGE . 1July 20,2012-REV.02

2N7002KTB

ELECTRICAL CHARACTERISTICS

P a ra m e ter S ym b o l Tes t C on d i t i o n Mi n . Typ . Ma x. Uni t s

S t a ti c

D r a i n - S ourc e B re a k d o wn Vo l ta g e

B V

Ga t e Thre s h o l d V o lt ag e V

D r a i n - S ourc e O n- S tat e Re s i st a nc e

Ze r o Ga t e V o lta g e D ra i n C u r r e nt

R

I

Gate Body Leakage I

Forward Transconductance g

Dynamic

Tota l G a te C h a r g e Q

Turn- O n D e la y Ti m e td

Turn- O f f D ela y Ti m e td

Inp ut C ap a c i t a nc e C

Out p ut C a p ac i ta n c e C

Re ve r s e Tra nsfe r C a p a c it a nc e

C

D SS

GS (t h)

DS (o n)

D SS

GS S

fS

g

(o n)

(o ff)

i ss

o ss

rs s

VGS=0 V, ID=1 0 A 6 0 - - V

VDS=VGS, ID=2 5 0 A 1 - 2 .5 V

VGS=4.5V, I D=200mA - - 4 . 0



VGS=10V, I D=500mA - - 3.0

VDS=60V, VGS=0V - - 1 A

VGS=+2 0 V, VDS=0 V - - +1 0 A

VDS=1 5 V, ID=2 5 0m A 1 0 0 - - m S

VDS=1 5 V, ID=2 0 0m A

VGS=4.5V

VDD=30V , RL=150

ID=200mA , V

RG=10

GEN

=10V

- - 0 .8 n C

- - 20 ns

- - 1 25

- - 3 5

VDS=2 5 V, VGS=0 V

f=1 . 0 M H

Z

- - 10

p F

- - 5

S o urc e - D ra i n D io d e

D i o d e F o r wa rd Vo l t a g e V

C o nti nuo us D i o d e F or wa rd C u r r e nt

P ul s e d D i o d e F o r wa rd C u r r e nt

Switching

Test Circuit

V

IN

R

G

SD

I

s

I

sM

IS=2 0 0m A , VGS=0 V - 0 . 8 2 1 .3 V

- - - 11 5 mA

- - - 800 m A

V

DD

Gate Charge

V

DD

Test Circuit

R

L

V

OUT

V

GS

1mA

R

G

R

L

PAGE . 2July 20,2012-REV.02

FIG.1- Output Characteristic

Typical Characteristics Curves (T =25 C,unless otherwise noted)

A

O

FIG.2- Transfer Characteristic

FIG.3- On Resistance vs Drain Current

FIG.4- On Resistance vs Gate to Source Voltage

FIG.5- On Resistance vs Junction Temperature

0

0.2

0.4

0.6

0.8

1

1.2

012345

VDS- Drain-to-Source Voltage (V)

I

D

- Drain-to-Source Current (A)

VGS= 6.0~10V

5.0V

4.0V

3.0V

0

1

2

3

4

5

2345678910

V

GS

- Gate -to -Source Voltage (V)

ID=200mA

ID=500mA

0

1

2

3

4

5

0 0.2 0.4 0 .6 0.8 1

ID-DrainCurrent(A)

VGS=4.5V

VGS=10V

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

TJ- Junction Temperature (oC)

R

DS(ON)

- On- Resistance(Normalized)

VGS=10V

I

D

=500mA

2N7002KTB

Typical Characteristics Curves (T =25 C,unless otherwise noted)

O

A

5.0V

4.0V

3.0V

Fig. 1-TYPICAL FORWARD CHARACTERISTIC

FIG.1- Output Characteristic

W

1.2

V =10V

DS

V =10V

DS

V =10V

DS

1

0.8

0.6

0.4

T =25

J

℃

T =25

J

℃

T =25

J

0.2

- Drain Source Current (A)

D

I

0

0123456

℃

VGS- Gate-to-Source Voltage (V)

FIG.2- Transfer Characteristic

W

DS(ON)

R - On-Resistance ( )

FIG.3- On Resistance vs Drain Current

July 20,2012-REV.02

FIG.5- On Resistance vs Junction Temperature

I =200mA

D

DS(ON)

R - On-Resistance ( )

FIG.4- On Resistance vs Gate to Source Voltage

PAGE . 3

Panjit 2N7002KTB Schematic [ru]