PANJIT 2N7002 Datasheet

2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VOL TAGE
60 V olts
CURRENT
115 mAmp
DESCRIPTION
• N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process.
FEATURES
• High density cell design for low RDS(ON).
• Voltage controlled small signal switching.
• Rugged and reliable.
• High saturation current capability.
• High-speed switcing.
• CMOS logic compatible input.
• Not thermal runaway.
• No secondary breakdown.
P ACKAGE SOT-23
D
G
ABSOLUTE MAXIMUM RATIN GS
TA = 25OC Unless otherwise noted.
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S
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DSS 06V
02
V GSS
D
I
O
C P D 002 Wm
J ,TSTG 051+ot55-/Wm
±
02
±
511 008
V
Am
O
C
O
W/C
Part Number: 2N7002 PAGE 1
ELECTRICAL CHARACTERISTICS
TA = 25OC Unless otherwise noted.
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SCITSIRETCARAHCFFO
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SCITSIRETCARAHCNO
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egatloVdlohserhTetaG V
ecnatsiseR-nOecruoS-niarDcitatSR
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DSS
DSS
GSSF
GSSR
GS
)ht( V
DS(ON
)VGS,V01=ID005=mA,TJ001=OC- 2.15.7
D(ON)
FS
V
V
DS
V
DS
V
DS
V
DS
DSV=GS,ID
V
GS
V
GS
V
GS
V
DSV2DS(ON
GS
,V0=ID01= µA06-- V
,V06=VGSV0=,TJ52=OC
,V06=VGSV0=,TJ521=OC
,V0=VGSV02=--001An
,V0=VGS=V02- - - 001- An
052= µA 1 1.2 5.2 V
,V01=ID005=mA
,V0.5=ID05=mA
,V01=VDSV2DS(ON)0050072- Am
,)ID002=mA 08 023 - Sm
.niM .pyT .xaM stinU
-
-
-
-
-
-
06.0
90.0
0.1
5.0
57.3
05.1
µA
Am
V
SCITSIRETCARAHCCIMANYD
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ecnaticapaCtuptuO C
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emiTnO-nruT T
emiTffO-nruT T
Note:
1.Pulse Test: Pulse Width ≤ 300µs, Duty Cycle 2.0%
ISS
OSS
RSS
ON
OFF
V
V
V
DS
,V52=VGS,V0=zHM0.1=F - 02 05 Fp
V
DS
,V52=VGS,V0=zHM0.1=F - 11 52 Fp
V
DS
,V52=VGS,V0=zHM0.1=F - 4 5 Fp
DD
DD
,V03=RL051= ,I
V
GS
,V03=RL051= ,I
V
GS
,V01=R
GEN
,V01=R
GEN
D
D
52=
52=
Am002=
Am002=
- - 02 sn
- - 02 sn
Part Number: 2N7002 PAGE 2
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