2EZ11 THRU 2EZ200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC
GLASS PASSIVA TED JUNCTION SILICON ZENER DIODE
VOLTA GE - 11 TO 200 Volts Power - 2.0 Watts
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Low profile package
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Built-in strain relief
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Glass passivated junction
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Low inductance
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Excellent clamping capability
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Typical ID less than 1£gA above 11V
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High temperature soldering :
260¢J/10 seconds at terminals
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Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Case: JEDEC DO-15, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 52mm tape
Weight: 0.015 ounce, 0.04 gram
Ratings at 25¢Jambient temperature unless otherwise specified.
SYMBOL VALUE UNITS
Peak Pulse Power Dissipation (Note A)
Derate above 75
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range TJ,T
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
¢J
P
I
2
24
15 Amps
-55 to +150 ¢J
Watts
mW/
¢J
ELECTRICAL CHARACTERISTICS (TA=25¢Junless otherwise noted) VF=1.2 V max ,
Maximum Zener Impedance (Note 3.)Leakage CurrentType No.(Note 1.)Nominal ZenerVoltage Vz @
£g
0.610.560.510.452EZ472EZ512EZ56
0.220.200.182EZ1202EZ1302EZ14
NOTES:
1. TOLERANCES - Suffix indicates 5% tolerance any other tolerance will be considered as a special device.
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms¡Ó 10ms
from the diode body , and an ambient temperature of 25¢J ( ¡Ï68¢J, -2¢J).
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage,
which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is
superimposed on IZT or IZK.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is
maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse
of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual
device capability is as described in Figure 3.