Panasonic XP0A554 Datasheet

Composite Transistors

XP5A554

Silicon NPN epitaxial planer transistor

For high speed switching

Features

■

●

For high speed switching.

●

Low collector to emitter saturation voltage V

●

Two elements incorporated into one package.

Basic Part Number of Element

■

●

2SC3757 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CES

V

EBO

C

I

CP

P

T

T

j

T

stg

40 V
40 V

5V
100 mA
300 mA
150 mW
150 ˚C

–55 to +150 ˚C

CE(sat)

.

2.1±0.1

1.25±0.1

0.425 0.425

1

0.650.65

2

2.0±0.10.9±0.1

3

0.2

0.7±0.1

0 to 0.1

1 : Base (Tr1) 4 : Collector (Tr2)
2 : Emitter (Tr1) 5 : Emitter (Tr2)
3 : Base (Tr2) 6 : Collector (Tr1)

EIAJ : SC–88
S–Mini Type Package (6–pin)

Marking Symbol: FO

Internal Connection

16

2

34

Tr1

Tr2

6

5

4

+0.05

–0.02

0.12

0.2±0.1

5

Unit: mm

0.2±0.05

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
Turn-on time t
Turn-off time t
Storage time t

CBO

EBO

FE

V

T

on

off

stg

CE(sat)

BE(sat)

ob

VCB = 15V, IE = 0 0.1 µA
VEB = 4V, IC = 0 0.1 µA
VCE = 1V, IC = 10mA 90 200
IC = 10mA, IB = 1mA 0.17 0.25 V
IC = 10mA, IB = 1mA 1.0 V
VCB = 10V, IE = –10mA, f = 200MHz

450 MHz

VCB = 10V, IE = 0, f = 1MHz 2 6 pF

17 ns
17 ns
10 ns

1

Composite Transistors XP5A554

P

— Ta

ton, t

Test Circuit t

off

220Ω

3.3kΩ

=10V

V

in

t

on

3.3kΩ
V

–3V

10%

I

=

bb

90%

— V

C

50Ω

V

in

V

out

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.20.2 1.00.4 0.80.6

Collector to emitter voltage VCE (V

T est Circuit

stg

10%

10%

0.1µF

90Ω

VCC=10V

1kΩ

V

out

0.1µF
V

out

50Ω

V

=3V

CC

V

in

V

out

10%

90%

t

off

Vin=10V

50Ω

0.1µF

0

V

in

V

out

(Wave form at A)

A

500Ω

500Ω
V

bb

t

stg

910Ω

=2V

200

180

)

160

mW

(

T

140

120

100

80

60

40

Total power dissipation P

20

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

CE

Ta=25˚C

IB=3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

V

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

0.01

0.1 0.3

)

Collector current IC (mA

— I

CE(sat)

1 3 10 30 100

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

)

100

)

V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01
13

Collector current IC (mA

T

V

— I

BE(sat)

10 30 100 300 1000

C

Ta=–25˚C

I

C/IB

75˚C

)

=10

25˚C

)

hFE — I

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 0.3

1 3 10 30 100

C

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

2

VCE=1V

)

fT — I

E

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

–1 –3 –10 –30 –100 –300 –1000

VCB=10V
Ta=25˚C

Emitter current IE (mA

)
pF

(

ob

Cob — V

6

5

4

3

2

1

CB

f=1MHz
I

=0

E

Ta=25˚C

Collector output capacitance C

0

)

3 10 30 100

1

Collector to base voltage VCB (V

)