Panasonic XP08081 Datasheet
Composite Transistors
XP8081
Silicon N-channel junction FET (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For analog switching (Tr1)/switching (Tr2)
Features
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Two elements incorporated into one package.
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Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
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2SK1103+UN1213 (transistors with built-in resistor)
Absolute Maximum Ratings (Ta=25˚C)
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Parameter Symbol Ratings Unit
Tr1
Tr2
Overall
Gate to drain voltage
Drain current I
Gate current I
Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature
V
GDS
D
G
V
CBO
V
CEO
C
P
T
T
j
T
stg
–50 V
20 mA
10 mA
50 V
50 V
100 mA
150 mW
150 ˚C
–55 to +150 ˚C
2.1±0.1
1.25±0.1
0.425 0.425
1
0.650.65
2
2.0±0.10.9±0.1
3
0.2
0.7±0.1
0 to 0.1
1 : Drain (Tr1) 4 : Emitter (Tr2)
2 : Source (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Gate (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: 9Z
Internal Connection
1
2
34
Tr1
Tr2
6
5
4
+0.05
–0.02
0.12
0.2±0.1
6
5
Unit: mm
0.2±0.05
1
Composite Transistors XP8081
Electrical Characteristics (Ta=25˚C)
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Tr1
Parameter Symbol Conditions min typ max Unit
Gate to drain voltage V
Drain current I
Gate cutoff current I
Gate to source cutoff voltage V
GDS
DSS
GSS
GSC
Mutual conductance gm VDS = 10V, ID = 1mA, f = 1kHz 1.8 2.5 mS
Drain resistance R
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance
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Tr2
C
C
C
DS(on)
iss
rss
oss
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Transition frequency f
Input resistance R
Resistance ratio R1/R
I
I
V
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
OH
OL
1
2
IG = –10µA, VDS = 0 –50 V
VDS = 10V, VGS = 0 0.2 2.2 mA
VGS = –30V, VDS = 0 –10 nA
VDS = 10V, ID = 10µA –1.0 V
VDS = 10mV, VGS = 0 400 Ω
VDS = 10V, VGS = 0, f = 1MHz 7 pF
VDS = 10V, VGS = 0, f = 1MHz 1.5 pF
VDS = 10V, VGS = 0, f = 1MHz 1.5 pF
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.1 mA
VCE = 10V, IC = 5mA 80
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 3.5V, RL = 1kΩ 0.2 V
VCB = 10V, IE = –1mA, f = 200MHz 150 MHz
–30% 47 +30% kΩ
0.8 1.0 1.2
2
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