Panasonic XP05553 Datasheet

Composite Transistors

XP5553

Silicon NPN epitaxial planer transistor

For amplification of the low frequency

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD1149 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

100 V
100 V

15 V
20 mA

50 mA
150 mW
150 ˚C

–55 to +150 ˚C

2.1±0.1

1.25±0.1

0.425 0.425

1

0.650.65

2

2.0±0.10.9±0.1

3

0.2

0.7±0.1

0 to 0.1

1 : Emitter (Tr1) 4 : Collector (Tr2)
2 : Base (Tr1) 5 : Emitter (Tr2)
3 : Base (Tr2) 6 : Collector (Tr1)

EIAJ : SC–88
S–Mini Type Package (6–pin)

Marking Symbol: 4U

Internal Connection

16

2

Tr1

6

5

4

+0.05

–0.02

0.12

0.2±0.1

5

Unit: mm

0.2±0.05

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

Collector cutoff current

Forward current transfer ratio h
Collector to emitter saturation voltage

I
I

V

CBO

CEO

FE

CBO

CEO

EBO

CE(sat)

Noise voltage NV

Transition frequency f

T

34

Tr2

IC = 10µA, IE = 0 100 V
IC = 1mA, IB = 0 100 V
IE = 10µA, IC = 0 15 V
VCB = 60V, IE = 0 0.1 µA
VCE = 60V, IB = 0 1.0 µA
VCE = 10V, IC = 2mA 400 2000
IC = 10mA, IB = 1mA 0.05 0.2 V
VCE = 10V, IC = 1mA, GV = 80dB

80 mV

Rg = 100kΩ, Function = FLAT
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz

1

Composite Transistors XP5553

PT — Ta IC — V

250

)

200

mW

(

T

150

100

50

Total power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

V

— I

100

)

V

(

30

CE(sat)

10

0.3

0.1

0.03

CE(sat)

3

1

25˚C

Ta=75˚C

–25˚C

C

Collector to emitter saturation voltage V

0.01

0.1 0.3

1 3 10 30 100

Collector current IC (mA

)

IC/IB=10

)

CE

80

)

60

mA

(

C

40

20

Collector current I

0

012210486

I

Collector to emitter voltage VCE (V

hFE — I

1800

FE

1500

1200

900

600

300

Forward current transfer ratio h

0

0.1 0.3

Ta=75˚C

1 3 10 30 100

C

VCE=10V

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

=100µA

B

80µA
60µA

50µA
40µA

30µA

20µA

10µA

)

IC — V

60

50

)
mA

(

Ta=75˚C –25˚C

40

C

30

20

Collector current I

10

0

02.01.61.20.80.4

)

Base to emitter voltage VBE (V

200

25˚C

fT — I

BE

E

VCE=10V

VCB=10V
Ta=25˚C

)

)

160

MHz

(

T

120

80

40

Transition frequency f

0
–0.1 –0.3 –1 –3 –10 –30 –100

Emitter current IE (mA

)

Cob — V

6

CB

)

pF

(

5

ob

4

3

2

1

Collector output capacitance C

0

3 10 30 100220550

1

Collector to base voltage VCB (V

2

f=1MHz
I

=0

E

Ta=25˚C

NV — I

100

VCE=10V
G

=80dB

V

Function=FLAT
Ta=25˚C

80

)
mV

(

60

40

Noise voltage NV

20

0

0.01 0.03 0.1 0.3 1

)

Collector current IC (mA

C

Rg=100kΩ

22kΩ

5kΩ

100

80

)
mV

(

60

40

Noise voltage NV

20

0

1 3 10 30 100550220

)

NV — V

Rg=100kΩ

22kΩ

5kΩ

CE

IC=1mA

=80dB

G

V

Function=FLAT
Ta=25˚C

Collector to emitter voltage VCE (V

)