Panasonic XP04654 Datasheet
Composite Transistors
XP4654
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For high speed switching
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SC3757+2SA1738
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Tr1
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CES
V
EBO
C
I
CP
V
CBO
V
CES
V
EBO
C
I
CP
P
T
T
j
T
stg
40 V
40 V
5V
100 mA
300 mA
–15 V
–15 V
–4 V
–50 mA
–100 mA
150 mW
150 ˚C
–55 to +150 ˚C
2.1±0.1
1.25±0.1
0.425 0.425
1
0.650.65
2
2.0±0.10.9±0.1
3
0.2
0.7±0.1
0 to 0.1
1 : Emitter (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: ED
Internal Connection
Tr1
16
2
34
Tr2
6
5
4
+0.05
–0.02
0.12
0.2±0.1
5
Unit: mm
0.2±0.05
1
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
Turn-on time t
Turn-off time t
Storage time t
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Turn-on time t
Turn-off time t
Storage time t
*1
Refer to the test circuit (page 459)
*2
Refer to the test circuit (page 460)
CBO
EBO
V
T
on
off
stg
CBO
EBO
h
h
V
T
on
off
stg
FE
CE(sat)
BE(sat)
ob
FE1
FE2
CE(sat)
ob
XP4654
VCB = 40V, IE = 0 0.1 µA
VEB = 4V, IC = 0 0.1 µA
VCE = 1V, IC = 10mA 60 320
IC = 10mA, IB = 1mA 0.17 0.25 V
IC = 10mA, IB = 1mA 1.0 V
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz 2 6 pF
*1
VCB = –8V, IE = 0 – 0.1 µA
VEB = –3V, IC = 0 – 0.1 µA
VCE = –1V, IC = –10mA 50 150
VCE = –1V, IC = –1mA 30
IC = –10mA, IB = –1mA – 0.1 – 0.2 V
VCB = –10V, IE = 10mA, f = 200MHz
800 1500 MHz
VCB = –5V, IE = 0, f = 1MHz 1 pF
*2
450 MHz
17 ns
17 ns
10 ns
12 ns
20 ns
19 ns
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
2
)
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