Panasonic XP04501 Datasheet

Composite Transistors
XP4501
Silicon NPN epitaxial planer transistor
For general amplification
Features
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
2SD601A × 2 elements
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage Collector to emitter voltage
Rating
Emitter to base voltage
of element
Collector current I Peak collector current Total power dissipation Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
60 V 50 V
7V 100 mA 200 mA 150 mW 150 ˚C
–55 to +150 ˚C
2.1±0.1
1.25±0.1
0.425 0.425
1
0.650.65
2
2.0±0.10.9±0.1
3
0.2
0.7±0.1
0 to 0.1
1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88 S–Mini Type Package (6–pin)
Marking Symbol: 5H
Internal Connection
Tr1
16
2
34
Tr2
6
5
4
+0.05
–0.02
0.12
0.2±0.1
5
Unit: mm
0.2±0.05
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h Collector to emitter saturation voltage Transition frequency f Collector output capacitance C
I I
V
CBO
CEO
T
CBO
CEO
EBO
FE
CE(sat)
ob
IC = 10µA, IE = 0 60 V IC = 2mA, IB = 0 50 V IE = 10µA, IC = 0 7 V VCB = 20V, IE = 0 0.1 µA VCE = 10V, IB = 0 100 µA VCE = 10V, IC = 2mA 160 460 IC = 100mA, IB = 10mA 0.1 0.3 V VCB = 10V, IE = –2mA, f = 200MHz 150 MHz VCB = 10V, IE = 0, f = 1MHz 3.5 pF
1
Composite Transistors XP4501
PT — Ta IC — V
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
IC — V
BE
240
200
) mA
(
160
C
120
80
Collector current I
40
0
02.01.61.20.80.4
Base to emitter voltage VBE (V
25˚C
Ta=75˚C –25˚C
VCE=10V
CE
60
50
) mA
(
40
C
30
20
Collector current I
10
0
01024 86
)
Collector to emitter voltage VCE (V
IC — I
240
VCE=10V Ta=25˚C
200
) mA
(
160
C
120
80
Collector current I
40
0
)
0 1000800600400200
Base current IB (µA
Ta=25˚C IB=160µA
140µA
120µA 100µA
80µA
60µA 40µA
20µA
)
B
)
1200
1000
) µA
(
800
B
600
400
Base current I
200
0
0 1.00.80.60.40.2
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
IB — V
BE
VCE=10V Ta=25˚C
Base to emitter voltage VBE (V
V
— I
CE(sat)
1 3 10 30 100
25˚C
C
IC/IB=10
Ta=75˚C
–25˚C
Collector current IC (mA
)
)
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 0.3
1 3 10 30 100
Collector current IC (mA
2
VCE=10V
Ta=75˚C 25˚C
–25˚C
fT — I
E
300
)
240
MHz
(
T
180
120
60
Transition frequency f
0 –0.1 –0.3
)
–1 –3 –10 –30 –100
Emitter current IE (mA
VCB=10V Ta=25˚C
)
240
200
) mV
(
160
120
80
Noise voltage NV
40
0
10
NV — I
VCE=10V
=80dB
G
V
Function=FLAT Ta=25˚C
30 100 300 100050 50020 200
C
Rg=100k
Collector current IC (µA
22k
4.7k
)
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