Panasonic XP0431N Datasheet
Composite Transistors
XP0431N
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
Features
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Two elements incorporated into one package.
(Transistors with built-in resistor)
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Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
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UN221N+UN211N
0.425 0.425
1
0.650.65
2
2.0±0.10.9±0.1
3
0.2
0.7±0.1
2.1±0.1
1.25±0.1
0 to 0.1
6
5
4
+0.05
–0.02
0.12
0.2±0.1
Unit: mm
0.2±0.05
Absolute Maximum Ratings (Ta=25˚C)
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Parameter Symbol Ratings Unit
Collector to base voltage
Tr1
Collector to emitter voltage
Collector current I
Collector to base voltage
Tr2
Collector to emitter voltage
Collector current I
Total power dissipation
Overall
Junction temperature
Storage temperature
V
CBO
V
CEO
C
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V
100 mA
–50 V
–50 V
–100 mA
150 mW
150 ˚C
–55 to +150 ˚C
1 : Emitter (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: HC
Internal Connection
Tr1
1
2
34
Tr2
6
5
1
Composite Transistors XP0431N
Electrical Characteristics (Ta=25˚C)
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●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
I
I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
V
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f
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Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
I
I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
V
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f
CBO
CEO
CBO
CEO
EBO
FE
CE(sat)
OH
OL
1
2
T
CBO
CEO
CBO
CEO
EBO
FE
CE(sat)
OH
OL
1
2
T
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 2 mA
VCE = 10V, IC = 5mA 80
IC = 10mA, IB = 0.3mA 0.3 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V
–30% 4.7 +30% kΩ
0.08 0.1 0.12
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 –2 mA
VCE = –10V, IC = –5mA 80
IC = –10mA, IB = – 0.3mA – 0.3 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V
–30% 4.7 +30% kΩ
0.08 0.1 0.12
VCB = –10V, IE = 2mA, f = 200MHz 150 MHz
2
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