Panasonic XP03311 Datasheet
Composite Transistors
2.1±0.1
0.425
1.25±0.1
0.2±0.05
2.0±0.1
0.65
1
2
3
4
5
0.9± 0.1
0.7±0.1
0.2
0 to 0.1
0.12
+0.05
– 0.02
0.2±0.1
0.425
0.65
XP03311
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
Features
■
●
Two elements incorporated into one package.
(Transistors with built-in resistor, Tr1 collecter is connected to
Tr2 base.)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
UN1211+UN1111
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Tr1
Collector to emitter voltage
Collector current I
Collector to base voltage
Tr2
Collector to emitter voltage
Collector current I
Total power dissipation
Overall
Junction temperature
Storage temperature
V
CBO
V
CEO
C
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V
100 mA
–50 V
–50 V
–100 mA
150 mW
150 ˚C
–55 to +150 ˚C
1 : Emitter(Tr1) 4 :Collector(Tr2)
2 : Base(Tr1) 5 :Collector(Tr1)
3 : Emitter(Tr2) Base(Tr2)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: DU
Internal Connection
Tr1
15
2
34
Tr2
Unit: mm
1
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f
I
I
V
I
I
V
CBO
CEO
EBO
T
CBO
CEO
EBO
T
CBO
CEO
FE
CE(sat)
OH
OL
1
CBO
CEO
FE
CE(sat)
OH
OL
1
XP03311
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.5 mA
VCE = 10V, IC = 5mA 35
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V
–30% 10 +30% kΩ
2
VCB = 10V, IE = –1mA, f = 200MHz 150 MHz
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 0.5 mA
VCE = –10V, IC = –5mA 35
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V
2
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
0.8 1.0 1.2
–30% 10 +30% kΩ
0.8 1.0 1.2
2
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