Panasonic XP03311 Datasheet

Composite Transistors
2.1±0.1
0.425
1.25±0.1
0.2±0.05
2.0±0.1
0.65
1
2
3
4
5
0.9± 0.1
0.7±0.1
0.2
0 to 0.1
0.12
+0.05
– 0.02
0.2±0.1
0.425
0.65
XP03311
Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
Features
Two elements incorporated into one package. (Transistors with built-in resistor, Tr1 collecter is connected to Tr2 base.)
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN1211+UN1111
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage
Tr1
Collector to emitter voltage Collector current I Collector to base voltage
Tr2
Collector to emitter voltage Collector current I Total power dissipation
Overall
Junction temperature Storage temperature
V
CBO
V
CEO
C
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V 100 mA –50 V –50 V
–100 mA
150 mW 150 ˚C
–55 to +150 ˚C
1 : Emitter(Tr1) 4 :Collector(Tr2) 2 : Base(Tr1) 5 :Collector(Tr1) 3 : Emitter(Tr2) Base(Tr2)
EIAJ : SC–88A S–Mini Type Package (5–pin)
Marking Symbol: DU
Internal Connection
Tr1
15
2
34
Tr2
Unit: mm
1
Composite Transistors
Electrical Characteristics (Ta=25˚C)
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I Forward current transfer ratio h Collector to emitter saturation voltage Output voltage high level V Output voltage low level V Input resistance R Resistance ratio R1/R Transition frequency f
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I Forward current transfer ratio h Collector to emitter saturation voltage Output voltage high level V Output voltage low level V Input resistance R Resistance ratio R1/R Transition frequency f
I I
V
I I
V
CBO
CEO
EBO
T
CBO
CEO
EBO
T
CBO
CEO
FE
CE(sat)
OH
OL
1
CBO
CEO
FE
CE(sat)
OH
OL
1
XP03311
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA VEB = 6V, IC = 0 0.5 mA VCE = 10V, IC = 5mA 35 IC = 10mA, IB = 0.3mA 0.25 V VCC = 5V, VB = 0.5V, RL = 1k 4.9 V VCC = 5V, VB = 2.5V, RL = 1k 0.2 V
–30% 10 +30% k
2
VCB = 10V, IE = –1mA, f = 200MHz 150 MHz
IC = –10µA, IE = 0 –50 V IC = –2mA, IB = 0 –50 V VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA VEB = –6V, IC = 0 – 0.5 mA VCE = –10V, IC = –5mA 35 IC = –10mA, IB = – 0.3mA – 0.25 V VCC = –5V, VB = – 0.5V, RL = 1k –4.9 V VCC = –5V, VB = –2.5V, RL = 1k – 0.2 V
2
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
0.8 1.0 1.2
–30% 10 +30% k
0.8 1.0 1.2
2
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