Panasonic XP01507 Datasheet

Composite Transistors

2.1±0.1

0.425

1.25±0.1

0.2±0.05

2.0±0.1

0.65

1

2

3

4

5

0.9± 0.1

0.7±0.1

0.2

0 to 0.1

0.12

+0.05

– 0.02

0.2±0.1

0.425

0.65

XP1507

Silicon NPN epitaxial planer transistor

High breakdown voltage and for low noise amplification

Features

■

●

Two elements incorporated into one package.
(Emitter-coupled transistors)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD814 × 2 elements

Unit: mm

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage

Rating
of
element

Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation

Overall

Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

Parameter Symbol Conditions min typ max Unit

Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency f

CBO

FE

hFE (small/large)*1VCE = 5V, IC = 10mA 0.5 0.99
V

T

Collector output capacitance C

*1

Ratio between 2 elements

150 V
150 V

5V

50 mA
100 mA
150 mW
150 ˚C

–55 to +150 ˚C

CEO

EBO

IC = 100µA, IB = 0 150 V
IE = 10µA, IC = 0 5 V
VCB = 100V, IE = 0 1 µA
VCE = 5V, IC = 10mA 90 450

CE(sat)

IC = 30mA, IB = 3mA 1 V
VCB = 10V, IE = –10mA, f = 200MHz

ob

VCB = 10V, IE = 0, f = 1MHz 2.3 pF

1 : Base (Tr1) 4 : Collector (Tr2)
2 : Emitter 5 : Collector (Tr1)
3 : Base (Tr2) EIAJ : SC–88A

S–Mini Type Package (5–pin)

Marking Symbol: 4O

Internal Connection

15

2

34

Tr1

Tr2

150 MHz

1

Composite Transistors XP1507

PT — Ta IC — V

250

)

200

mW

(

T

150

100

50

Total power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

V

— I

100

)

V

(

30

CE(sat)

10

0.3

0.1

0.03

CE(sat)

3

1

25˚C

–25˚C

C

Ta=75˚C

Collector to emitter saturation voltage V

0.01

0.1 0.3

1 3 10 30 100

Collector current IC (mA

)

IC/IB=10

)

CE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

012210486

IB=2.0mA

Collector to emitter voltage VCE (V

hFE — I

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 0.3

1 3 10 30 100

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

)

IC — V

120

100

)
mA

(

C

Collector current I

)

200

Ta=75˚C –25˚C

80

60

40

20

0

02.01.61.20.80.4

Base to emitter voltage VBE (V

25˚C

fT — I

BE

E

VCE=10V

VCB=10V
Ta=25˚C

)

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10

–2

Emitter current IE (mA

–30 –100

–20–5–50

)

)
pF

(

ob

Cob — V

5

4

3

2

1

CB

f=1MHz

=0

I

E

Ta=25˚C

Collector output capacitance C

0

1 3 10 30 100220550

Collector to base voltage VCB (V

2

)