Panasonic XP0121N Datasheet

Composite Transistors
2.1±0.1
0.425
1.25±0.1
0.2±0.05
2.0±0.1
0.65
1
2
3
4
5
0.9± 0.1
0.7±0.1
0.2
0 to 0.1
0.12
+0.05
– 0.02
0.2±0.1
0.425
0.65
XP0121N
Silicon NPN epitaxial planer transistor
For switching/digital circuits
Features
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN221N × 2 elements
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage
Rating
Collector to emitter voltage
of element
Collector current I Total power dissipation Junction temperature
Overall
Storage temperature
Electrical Characteristics (Ta=25˚C)
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V 100 mA 150 mW 150 ˚C
–55 to +150 ˚C
1 : Base (Tr1) 4 : Collector (Tr2) 2 : Emitter 5 : Collector (Tr1) 3 : Base (Tr2) EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: HN
Internal Connection
Tr1
15
2
34
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I Forward current transfer ratio h Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level V Output voltage low level V Input resistance R Resistance ratio R1/R Transition frequency f
*1
Ratio between 2 elements
CBO
CEO
I
CBO
I
CEO
EBO
FE
hFE (small/large)*1VCE = 10V, IC = 5mA 0.5 0.99 V
CE(sat)
OH
OL
1
2
T
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA VEB = 6V, IC = 0 0.2 mA VCE = 10V, IC = 5mA 80 400
IC = 10mA, IB = 0.3mA 0.25 V VCC = 5V, VB = 0.5V, RL = 1k 4.9 V VCC = 5V, VB = 2.5V, RL = 1k 0.2 V
–30% 4.7 +30% k
0.1
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
1
Composite Transistors XP0121N
PT — Ta
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
)
— V
I
C
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
CB
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
10
)
V
(
CE(sat)
1
0.1
Collector to emitter saturation voltage V
0.01
)
Ta=75˚C
25˚C
–25˚C
1
10 100 1000
Collector current IC (mA
IO — V
10000
)
1000
µA
(
O
100
C
IC/IB=10
480
FE
400
320
240
160
80
Forward current transfer ratio h
0
1
)
IN
VO=5V Ta=25˚C
100
)
10
V
(
IN
1
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 100 1000
Collector current IC (mA
VIN — I
O
VO=0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
1
10 100
Collector to base voltage VCB (V
2
10
Output current I
1
0.4
)
Input voltage VIN (V
1.41.210.80.6
)
Input voltage V
0.1
0.01
0.1
Output current IO (mA
1 10 100
)
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