Panasonic XP0121N Datasheet

Composite Transistors

2.1±0.1

0.425

1.25±0.1

0.2±0.05

2.0±0.1

0.65

1

2

3

4

5

0.9± 0.1

0.7±0.1

0.2

0 to 0.1

0.12

+0.05

– 0.02

0.2±0.1

0.425

0.65

XP0121N

Silicon NPN epitaxial planer transistor

For switching/digital circuits

Features

■

●

Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

UN221N × 2 elements

Unit: mm

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage

Rating

Collector to emitter voltage

of
element

Collector current I
Total power dissipation
Junction temperature

Overall

Storage temperature

Electrical Characteristics (Ta=25˚C)

■

V

CBO

V

CEO

C

P

T

T

j

T

stg

50 V

50 V
100 mA
150 mW
150 ˚C

–55 to +150 ˚C

1 : Base (Tr1) 4 : Collector (Tr2)
2 : Emitter 5 : Collector (Tr1)
3 : Base (Tr2) EIAJ : SC–88A

S–Mini Type Package (5–pin)

Marking Symbol: HN

Internal Connection

Tr1

15

2

34

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f

*1

Ratio between 2 elements

CBO

CEO

I

CBO

I

CEO

EBO

FE

hFE (small/large)*1VCE = 10V, IC = 5mA 0.5 0.99
V

CE(sat)

OH

OL

1

2

T

IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.2 mA
VCE = 10V, IC = 5mA 80 400

IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V

–30% 4.7 +30% kΩ

0.1

VCB = 10V, IE = –2mA, f = 200MHz 150 MHz

1

Composite Transistors XP0121N

PT — Ta

250

)

200

mW

(

T

150

100

50

Total power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

)

— V

I

C

160

140

)

120

mA

(

C

100

80

60

40

Collector current I

20

0

012210486

Collector to emitter voltage VCE (V

Cob — V

6

)
pF

(

5

ob

4

3

CE

CB

Ta=25˚C

IB=1.0mA

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

f=1MHz

=0

I

E

Ta=25˚C

V

— I

CE(sat)

10

)

V

(

CE(sat)

1

0.1

Collector to emitter saturation voltage V

0.01

)

Ta=75˚C

25˚C

–25˚C

1

10 100 1000

Collector current IC (mA

IO — V

10000

)

1000

µA

(

O

100

C

IC/IB=10

480

FE

400

320

240

160

80

Forward current transfer ratio h

0

1

)

IN

VO=5V
Ta=25˚C

100

)

10

V

(

IN

1

hFE — I

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

10 100 1000

Collector current IC (mA

VIN — I

O

VO=0.2V
Ta=25˚C

)

2

1

Collector output capacitance C

0

1

10 100

Collector to base voltage VCB (V

2

10

Output current I

1

0.4

)

Input voltage VIN (V

1.41.210.80.6

)

Input voltage V

0.1

0.01

0.1

Output current IO (mA

1 10 100

)