Panasonic XP01210 Datasheet
Composite Transistors
2.1±0.1
0.425
1.25±0.1
0.2±0.05
2.0±0.1
0.65
1
2
3
4
5
0.9± 0.1
0.7±0.1
0.2
0 to 0.1
0.12
+0.05
– 0.02
0.2±0.1
0.425
0.65
XP1210
Silicon NPN epitaxial planer transistor
For switching/digital circuits
Features
■
●
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
UN1210 × 2 elements
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Rating
of
element
Overall
Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V
100 mA
150 mW
150 ˚C
–55 to +150 ˚C
1 : Base (Tr1) 4 : Collector (Tr2)
2 : Emitter 5 : Collector (Tr1)
3 : Base (Tr2) EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: AC
Internal Connection
15
2
Tr1
Unit: mm
Electrical Characteristics (Ta=25˚C)
■
34
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Transition frequency f
Input resistance R
* Ratio between 2 elements
CBO
CEO
I
CBO
I
CEO
EBO
FE
hFE (small/large)*
V
CE(sat)
OH
OL
T
1
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.01 mA
VCE = 10V, IC = 5mA 160 460
VCE = 10V, IC = 5mA 0.5 0.99
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
–30% 47 +30% kΩ
1
Composite Transistors XP1210
PT — Ta
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
)
— V
I
C
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
IB=1.0mA
0.9mA
0.8mA
0.3mA
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
0.6mA
0.7mA
CB
0.4mA
0.5mA
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
0.1mA
=0
V
100
)
V
(
30
CE(sat)
10
0.3
0.1
0.03
— I
CE(sat)
3
1
25˚C
–25˚C
C
IC/IB=10
Ta=75˚C
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
10000
3000
)
1000
µA
(
O
300
1 3 10 30 100
Collector current IC (mA
IO — V
IN
VO=5V
Ta=25˚C
)
100
30
)
10
V
(
IN
0
13
10 30 100 300 1000
Collector current IC (mA
VIN — I
3
O
VO=0.2V
Ta=25˚C
)
3
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
2
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
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