Panasonic XP0111M Datasheet

Composite Transistors

2.1±0.1

0.425

1.25±0.1

0.2±0.05

2.0±0.1

0.65

1

2

3

4

5

0.9± 0.1

0.7±0.1

0.2

0 to 0.1

0.12

+0.05

– 0.02

0.2±0.1

0.425

0.65

XP0111M

Silicon PNP epitaxial planer transistor

For switching/digital circuits

Features

■

●

Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

UN211M × 2 elements

Unit: mm

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage

Rating

Collector to emitter voltage

of
element

Collector current I
Total power dissipation
Junction temperature

Overall

Storage temperature

Electrical Characteristics (Ta=25˚C)

■

V

CBO

V

CEO

C

P

T

T

j

T

stg

–50 V
–50 V

–100 mA

150 mW
150 ˚C

–55 to +150 ˚C

1 : Base (Tr1) 4 : Collector (Tr2)
2 : Emitter 5 : Collector (Tr1)
3 : Base (Tr2) EIAJ : SC–88A

S–Mini Type Package (5–pin)

Marking Symbol: EK

Internal Connection

Tr1

1

2

34

Tr2

5

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f

*1

Ratio between 2 elements

CBO

CEO

I

CBO

I

CEO

EBO

FE

hFE (small/large)*1VCE = –10V, IC = –5mA 0.5 0.99
V

CE(sat)

OH

OL

1

2

T

IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 0.2 mA
VCE = –10V, IC = –5mA 80

IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V

–30% 2.2 +30% kΩ

0.047

VCB = –10V, IE = 1mA, f = 200MHz 80 MHz

1

Composite Transistors XP0111M

PT — Ta

250

)

200

mW

(

T

150

100

50

Total power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

)

— V

I

C

CE

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

0 –12–2 –10–4 –8–6

IB=–1.0mA

–0.9mA

–0.8mA

–0.7mA

–0.6mA

Collector to emitter voltage VCE (V

)
pF

(

ob

Cob — V

10

8

6

4

2

CB

f=1MHz
I
Ta=25˚C

Collector output capacitance C

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Ta=25˚C

–0.5mA
–0.4mA
–0.3mA

–0.2mA
–0.1mA

=0

E

V

— I

CE(sat)

–10

)

V

(

–3

CE(sat)

–1

–0.3

–0.1

–0.03

–0.01

–0.003

Collector to emitter saturation voltage V

–0.001

)

25˚C

–25˚C

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

IO — V

–4

10

)

–3

10

µA

(

O

–2

10

–1

10

Output current I

1
–0.4

)

Input voltage VIN (V

Ta=75˚C

C

IC/IB=10

500

FE

400

300

200

100

Forward current transfer ratio h

0

–1 –3

)

IN

VO=–5V
Ta=25˚C

–1.4–1.2–1.0–0.8–0.6

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

)

hFE — I

C

VCE=–10V

Ta=75˚C
25˚C
–25˚C

–10 –30 –100 –300 –1000

Collector current IC (mA

VIN — I

–1 –3 –10 –30 –100

O

VO=–0.2V
Ta=25˚C

Output current IO (mA

)

)

2