Panasonic XN06534 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN6534

Silicon NPN epitaxial planer transistor

For high-frequency amplification

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SC2404 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage

Rating

Collector to emitter voltage

of

Emitter to base voltage

element

Collector current I
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

P

T

T

j

T

stg

30 V
20 V

3V

15 mA
200 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Base (Tr2)
2 : Base (Tr1) 5 : Emitter (Tr2)
3 : Collector (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: 7F

Internal Connection

Tr1

61

5

Unit: mm

2

43

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Emitter to base voltage V
Forward current transfer ratio h
Forward current transfer hFE ratio
Base to emitter voltage V
Common emitter reverse transfer capacitance
Transition frequency f
Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB
Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB

*1

Ratio between 2 elements

CBO

EBO

FE

hFE (small/large)*1VCB = 6V, IE = –1mA 0.5 0.99

BE

C

re

T

IC = 10µA, IE = 0 30 V
IE = 10µA, IC = 0 3 V
VCB = 6V, IE = –1mA 40 260

VCB = 6V, IE = –1mA 720 mV
VCB = 6V, IE = –1mA, f = 10.7MHz 0.8 1 pF
VCB = 6V, IE = –1mA, f = 200MHz 450 650 MHz

1

Composite Transistors

XN6534

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

IC — V

BE

30

25

)

mA

(

20

C

15

10

Collector current I

5

0

02.01.61.20.80.4

Base to emitter voltage VBE (V

25˚C

Ta=75˚C –25˚C

VCE=6V

CE

12

10

)
mA

(

8

C

6

4

Collector current I

2

0

0481216

)

)

Collector to emitter voltage VCE (V

V

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1
Ta=75˚C

0.03

Collector to emitter saturation voltage V

0.01

0.1 0.3

–25˚C

1 3 10 30 100

Collector current IC (mA

25˚C

— I

Ta=25˚C

IB=100µA

80µA

60µA

40µA

20µA

)

C

IC/IB=10

)

12

10

)
mA

(

8

C

6

4

Collector current I

2

0

0 40 80 120 160

360

FE

300

240

180

120

60

Forward current transfer ratio h

0

0.1 0.3

IC — I

B

VCE=6V
Ta=25˚C

Base current IB (µA

hFE — I

C

VCE=6V

Ta=75˚C

25˚C

–25˚C

1 3 10 30 100

Collector current IC (mA

)

)

fT — I

E

1200

)

1000

MHz

(

T

800

600

400

200

Transition frequency f

0
–0.1 –0.3 –1 –3 –10 –30 –100

Emitter current IE (mA

2

VCB=6V
Ta=25˚C

Zrb — I

E

)

120

)

Ω

(

100

rb

80

60

40

20

VCB=6V
f=2MHz
Ta=25˚C

pF

(

2.4

re

2.0

1.6

1.2

0.8

0.4

Cre — V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

Reverse transfer impedance Z

Common emitter reverse transfer capacitance C

0

–0.3 –1 –3 –10

)

–0.1

Emitter current IE (mA

)

0

0.1 0.3 1 3 10 30 100

Collector to emitter voltage VCE (V

)