Panasonic XN06435 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN6435

Silicon PNP epitaxial planer transistor

For high-frequency amplification

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SA1022 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage

Rating

Collector to emitter voltage

of

Emitter to base voltage

element

Collector current I
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

P

T

T

j

T

stg

–30 V
–20 V

–5 V
–30 mA
300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Base (Tr2)
2 : Base (Tr1) 5 : Emitter (Tr2)
3 : Collector (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: 7W

Internal Connection

Tr1

61

5

Unit: mm

2

43

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

I

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Base to emitter voltage V
Transition frequency f
Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 dB
Reverse transfer impedance Z
Common emitter reverse transfer capacitance
Ratio between 2 elements

*1

CBO

I

CEO

EBO

FE

hFE (small/large)*1VCE = –10V, IC = –1mA 0.5 0.99
V

CE(sat)

BE

T

rb

C

re

VCB = –10V, IE = 0 –0.1 µA
VCE = –20V, IB = 0 –100 µA
VEB = –5V, IC = 0 –10 µA
VCE = –10V, IC = –1mA 50 220

IC = –10mA, IB = –1mA – 0.1 V
VCE = –10V, IC = –1mA – 0.7 V
VCB = –10V, IE = 1mA, f = 200MHz 150 MHz

VCB = –10V, IE = 1mA, f = 2MHz 22 Ω
VCB = –10V, IE = 1mA, f = 10.7MHz

1.2 pF

1

Composite Transistors

XN6435

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

hFE — I

C

120

FE

100

80

60

40

Ta=75˚C

25˚C

–25˚C

VCE=–10V

V

CE

–30

–25

)
mA

(

–20

C

–15

–10

Collector current I

–5

0

0 –10–2 –4 –8–6

)

Collector to emitter voltage VCE (V

Cob — V

6

)
pF

(

5

ob

4

3

2

CB

Ta=25˚C

IB=–250µA

–200µA
–150µA

–100µA

–50µA

f=1MHz
I

=0

E

Ta=25˚C

)

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

Collector to emitter saturation voltage V

–0.01

–0.1 –0.3

Collector current IC (mA

)

5

pF

(

re

4

3

2

— I

CE(sat)

25˚C

–1 –3 –10 –30 –100

C

IC/IB=10

Ta=75˚C

–25˚C

)

Cre — V

CE

IC=–1mA
f=10.7MHz
Ta=25˚C

20

Forward current transfer ratio h

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector current IC (mA

fT — I

E

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

0.1 0.3 1 3 10 30 100

VCB=–10V
Ta=25˚C

Emitter current IE (mA

1

Collector output capacitance C

0

–0.1 –0.3

)

24

20

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

PG — I

C

VCE=–10V
f=100MHz
Ta=25˚C

)

)
dB

(

16

12

8

Power gain PG

4

0

–0.1 –0.3 –1 –3 –10 –30 –100

)

Collector current IC (mA

)

1

Common emitter reverse transfer capacitance C

0

–1 –5

–2 –3

Collector to emitter voltage VCE (V

NF — I

5

4

)

dB

(

3

2

Noise figure NF

1

0

0.1 0.3 1 3 1020.50.2 5

Emitter current IE (mA

–10

–20

E

–50

–30

VCB=–10V
f=100MHz
Ta=25˚C

)

–100

)

2