Panasonic XN06401 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN6401

Silicon PNP epitaxial planer transistor

For general amplification

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SB709A × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage
Collector to emitter voltage

Rating
of

Emitter to base voltage

element

Collector current I
Peak collector current
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

–60 V
–50 V

–7 V
–100 mA
–200 mA

300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Base (Tr2)
2 : Base (Tr1) 5 : Emitter (Tr2)
3 : Collector (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: 5O

Internal Connection

Tr1

61

5

43

Tr2

Unit: mm

2

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

Collector cutoff current

Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Ratio between 2 elements

*1

IC = –10µA, IE = 0 –60 V
IC = –2mA, IB = 0 –50 V
IE = –10µA, IC = 0 –7 V
VCB = –20V, IE = 0 – 0.1 µA
VCE = –10V, IB = 0 –100 µA
VCE = –10V, IC = –2mA 160 460

I
I

CBO

CEO

EBO

CBO

CEO

FE

hFE (small/large)*1VCE = –10V, IC = –2mA 0.5 0.99
V

T

CE(sat)

ob

IC = –100mA, IB = –10mA – 0.3 – 0.5 V
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
VCB = –10V, IE = 0, f = 1MHz 2.7 pF

1

Composite Transistors XN6401

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

IB — V

BE

–400

–350

)

–300

µA

(

–250

B

–200

VCE=–5V
Ta=25˚C

CE

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

0

)

0 –18–2 –4 –6 –8 –10 –12–14 –16

Collector to emitter voltage VCE (V

IB=–300µA

IC — V

–240

–200

)
mA

(

–160

C

–120

Ta=75˚C –25˚C

Ta=25˚C

–250µA

–200µA

–150µA

–100µA

–50µA

)

BE

VCE=–5V

25˚C

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

0

0 –100 –200 –300 –400

–10

)

V

(

–3

CE(sat)

–1

–0.3

–0.1

IC — I

VCE=–5V
Ta=25˚C

Base current IB (µA

V

— I

CE(sat)

B

)

C

IC/IB=10

Ta=75˚C

25˚C

–25˚C

–150

Base current I

–100

–50

0

0 –0.4 –0.8 –1.2 –1.6

Base to emitter voltage VBE (V

hFE — I

C

600

FE

500

400

Ta=75˚C

25˚C

300

–25˚C

200

100

Forward current transfer ratio h

0

–1 –3

–10 –30 –100 –300 –1000

VCE=–10V

Collector current IC (mA

–80

Collector current I

–40

0

0–2.0–1.6–1.2–0.8–0.4

)

)

Base to emitter voltage VBE (V

fT — I

160

VCB=–10V
Ta=25˚C

140

)
MHz

120

(

T

100

80

60

40

Transition frequency f

20

0

0.1 0.3

1 3 10 30 100

Emitter current IE (mA

E

)

)

–0.03

–0.01

–0.003

Collector to emitter saturation voltage V

–0.001

–1 –3

8

)
pF

7

(

ob

6

5

4

3

2

1

Collector output capacitance C

0

–1 –5

–10 –30 –100 –300 –1000

Collector current IC (mA

–2

Cob — V

–3

–10

CB

–20

f=1MHz
I

E

Ta=25˚C

–30

=0

–50

Collector to base voltage VCB (V

)

–100

)

2