Panasonic XN06211 Datasheet

Composite Transistors
2.8
+0.2 –0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25 –0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2 0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN6211
Silicon NPN epitaxial planer transistor
For switching/digital circuits
Features
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN1211 × 2 elements
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage
Rating
Collector to emitter voltage
of element
Collector current I Total power dissipation Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V 100 mA 300 mW 150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Base (Tr2) 2 : Base (Tr1) 5 : Emitter (Tr2) 3 : Collector (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74 Mini Type Package (6–pin)
Marking Symbol: 7Z
Internal Connection
Tr1
6
5
Unit: mm
1
2
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I Forward current transfer ratio h Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level V Output voltage low level V Transition frequency f Input resistance R Resistance ratio R1/R
Ratio between 2 elements
*1
43
Tr2
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA VEB = 6V, IC = 0 0.5 mA VCE = 10V, IC = 5mA 35
I I
CBO
CEO
CBO
CEO
EBO
FE
hFE (small/large)*1VCE = 10V, IC = 5mA 0.5 0.99 V
T
CE(sat)
OH
OL
1
2
IC = 10mA, IB = 0.3mA 0.25 V VCC = 5V, VB = 0.5V, RL = 1k 4.9 V VCC = 5V, VB = 2.5V, RL = 1k 0.2 V VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
–30% 10 +30% k
0.8 1.0 1.2
1
Composite Transistors
PT — Ta
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
XN6211
)
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
IB=1.0mA
0.9mA
0.8mA
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
–25˚C
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
— I
25˚C
IN
C
Ta=75˚C
IC/IB=10
VO=5V Ta=25˚C
hFE — I
C
400
FE
300
200
100
VCE=10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
13
)
100
30
)
10
V
(
IN
3
1
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
2
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
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