Panasonic XN05531 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN5531

Silicon NPN epitaxial planer transistor

For high frequency oscillation and mixing

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SC3130 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage

Rating

Collector to emitter voltage

of

Emitter to base voltage

element

Collector current I
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

P

T

T

j

T

stg

15 V
10 V

3V

50 mA
200 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Base (Tr2)
2 : Emitter (Tr2) 5 : Base (Tr1)
3 : Collector (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: 5M

Internal Connection

Tr1

61

5

Unit: mm

2

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to emitter voltage V
Emitter to base voltage V

Collector cutoff current

Forward current transfer ratio h
Forward current transfer hFE ratio

h

ratio h

FE2/hFE1

Collector to emitter saturation voltage
Collector output capacitance C
Transition frequency f
Collector to base parameter rbb'·C
Common base reverse transfer capacitance
Ratio between 2 elements

*1

43

Tr2

IC = 2mA, IB = 0 10 V
IE = 10µA, IC = 0 3 V
VCB = 10V, IE = 0 1 µA
VCE = 10V, IB = 0 10 µA
VCE = 4V, IC = 5mA 75 200 400

I
I

CEO

EBO

CBO

CEO

FE1

hFE (small/large)*1VCE = 4V, IC = 5mA 0.5 0.99

FE2/hFE1

V

CE(sat)

ob

T

C

rb

VCE = 4V, IC = 100µA
VCE = 4V, IC = 5mA
IC = 20mA, IB = 4mA 0.5 V
VCB = 4V, IE = 0, f = 1MHz 0.9 1.1 pF
VCB = 4V, IE = –5mA, f = 200MHz 1.4 1.9 2.5 GHz

C

VCB = 4V, IE = –5mA, f = 30MHz 11.8 13.5 ps
VCB = 4V, IE = 0, f = 1MHz 0.25 0.35 pF

0.75 1.6

1

Composite Transistors

XN5531

PT — Ta IC — V

240

)

200

mW

(

T

160

120

80

40

Total power dissipation P

0

0 16040 12080

Ambient temperature Ta (˚C

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

0.01

0.1 0.3

1 3 10 30 100

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

C

IC/IB=10

)

CE

80

)

60

mA

(

C

40

20

Collector current I

0

012210486

Collector to emitter voltage VCE (V

hFE — I

C

360

FE

300

240

180

120

60

Forward current transfer ratio h

0

0.1 0.3

Ta=75˚C

25˚C

–25˚C

1 3 10 30 100

Collector current IC (mA

Ta=25˚C

IB=500µA

400µA
300µA

200µA

100µA

VCE=4V

)

IC — V

BE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

02.01.61.20.80.4

)

Base to emitter voltage VBE (V

25˚C

Ta=75˚C –25˚C

fT — I

4.0

3.5

)
GHz

3.0

(

T

2.5

2.0

1.5

1.0

Transition frequency f

0.5

0
–0.1 –0.3

–1 –3 –10 –30 –100

Emitter current IE (mA

VCE=4V

)

E

VCB=4V
Ta=25˚C

)

Cob — V

1.6

)
pF

1.4

(

ob

1.2

1.0

0.8

0.6

0.4

0.2

Collector output capacitance C

0

3 10 30 100

1

CB

Collector to base voltage VCB (V

2

f=1MHz
I

=0

E

Ta=25˚C

)