Panasonic XN05501 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN5501

Silicon NPN epitaxial planer transistor

For general amplification

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD601A × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage
Collector to emitter voltage

Rating

Emitter to base voltage

of
element

Collector current I
Peak collector current
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

60 V
50 V

7V
100 mA
200 mA
300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Base (Tr2)
2 : Emitter (Tr2) 5 : Base (Tr1)
3 : Collector (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: 5L

Internal Connection

Tr1

61

5

43

Tr2

Unit: mm

2

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

Collector cutoff current

Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Ratio between 2 elements

*1

IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 7 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IB = 0 100 µA
VCE = 10V, IC = 2mA 160 460

I
I

CBO

CEO

EBO

CBO

CEO

FE

hFE (small/large)*1VCE = 10V, IC = 2mA 0.5 0.99
V

T

CE(sat)

ob

IC = 100mA, IB = 10mA 0.1 0.3 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
VCB = 10V, IE = 0, f = 1MHz 3.5 pF

1

Composite Transistors

XN5501

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

IC — V

BE

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

02.01.61.20.80.4

Base to emitter voltage VBE (V

25˚C

Ta=75˚C –25˚C

VCE=10V

CE

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

01024 86

)

Collector to emitter voltage VCE (V

IC — I

240

VCE=10V
Ta=25˚C

200

)
mA

(

160

C

120

80

Collector current I

40

0

)

0 1000800600400200

Base current IB (µA

Ta=25˚C
IB=160µA

140µA

120µA
100µA

80µA

60µA
40µA

20µA

)

B

)

1200

1000

)
µA

(

800

B

600

400

Base current I

200

0

0 1.00.80.60.40.2

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

0.01

0.1 0.3

IB — V

BE

VCE=10V
Ta=25˚C

Base to emitter voltage VBE (V

V

— I

CE(sat)

1 3 10 30 100

25˚C

C

IC/IB=10

Ta=75˚C

–25˚C

Collector current IC (mA

)

)

hFE — I

C

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 0.3

1 3 10 30 100

Collector current IC (mA

2

VCE=10V

Ta=75˚C
25˚C

–25˚C

fT — I

E

300

)

240

MHz

(

T

180

120

60

Transition frequency f

0
–0.1 –0.3

)

–1 –3 –10 –30 –100

Emitter current IE (mA

VCB=10V
Ta=25˚C

)

240

200

)
mV

(

160

120

80

Noise voltage NV

40

0

10

NV — I

VCE=10V

=80dB

G

V

Function=FLAT
Ta=25˚C

30 100 300 100050 50020 200

C

Rg=100kΩ

Collector current IC (µA

22kΩ

4.7kΩ

)