Panasonic XN04608 Datasheet
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN4608
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For general amplification (Tr1)
For amplification of low frequency output (Tr2)
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SD601A+2SB970
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Tr1
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
60 V
50 V
7V
100 mA
200 mA
–15 V
–10 V
–7 V
– 0.5 A
–1 A
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 5E
Internal Connection
Tr1
61
5
43
Tr2
Unit: mm
2
1
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
I
I
V
h
h
V
CBO
CEO
T
CBO
T
CBO
CEO
EBO
FE
CE(sat)
ob
CBO
CEO
EBO
FE1
FE2
CE(sat)
BE(sat)
ob
XN4608
IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 7 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IB = 0 100 µA
VCE = 10V, IC = 2mA 160 460
IC = 100mA, IB = 10mA 0.1 0.3 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
VCB = 10V, IE = 0, f = 1MHz 3.5 pF
IC = –10µA, IE = 0 –15 V
IC = –1mA, IB = 0 –10 V
IE = –10µA, IC = 0 –7 V
VCB = –10V, IE = 0 – 0.1 µA
VCE = –2V, IC = –0.5A* 100 350
VCE = –2V, IC = –1A* 60
IC = –0.4A, IB = –8mA – 0.16 – 0.3 V
IC = –0.4A, IB = –8mA – 0.8 –1.2 V
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz 22 pF
130 MHz
* Pulse measurement
Common characteristics chart
— Ta
P
T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
2
)
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