Panasonic XN04604 Datasheet
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN4604
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For amplification of low frequency output
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SD1328+2SB970
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Tr1
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
25 V
20 V
12 V
0.5 A
1A
–15 V
–10 V
–7 V
– 0.5 A
–1 A
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 5I
Internal Connection
Tr1
61
5
43
Tr2
Unit: mm
2
1
Composite Transistors XN4604
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
ON Resistance R
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
*1
Pulse measurement
*2
Ron test circuit
CBO
h
h
V
T
CBO
h
h
V
T
CBO
CEO
EBO
FE1
FE2
CE(sat)
BE(sat)
ob
*2
on
CBO
CEO
EBO
FE1
FE2
CE(sat)
BE(sat)
ob
IB=1mA
R
IC = 10µA, IE = 0 25 V
IC = 1mA, IB = 0 20 V
IE = 10µA, IC = 0 12 V
VCB = 25V, IE = 0 0.1 µA
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A
*1
*1
200 800
60
IC = 0.5A, IB = 20mA 0.13 0.4 V
IC = 0.5A, IB = 20mA 1.2 V
VCB = 10V, IE = –50mA, f = 200MHz
200 MHz
VCB = 10V, IE = 0, f = 1MHz 10 pF
1.0 Ω
IC = –10µA, IE = 0 –15 V
IC = –1mA, IB = 0 –10 V
IE = –10µA, IC = 0 –7 V
VCB = –10V, IE = 0 – 0.1 µA
VCE = –2V, IC = –0.5A
VCE = –2V, IC = –1A
*1
*1
100 350
60
IC = –0.4A, IB = –8mA – 0.16 – 0.3 V
IC = –0.4A, IB = –8mA – 0.8 –1.2 V
VCB = –10V, IE = 50mA, f = 200MHz
130 MHz
VCB = –10V, IE = 0, f = 1MHz 22 pF
1kΩ
f=1kHz
V=0.3V
V
A
V
B
= ✕1000(Ω)
on
VA–V
B
V
B
V
V
2
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