Panasonic XN04556 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4556

NPN epitaxial planer transistor

For amplification of the low frequency

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD1149 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

100 V
100 V

15 V
20 mA

50 mA
300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: EP

Internal Connection

61

5

Tr1

2

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

43

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

Collector cutoff current

Forward current transfer ratio h
Collector to emitter saturation voltage

Noise voltage NV

Transition frequency f

I
I

V

CBO

CEO

FE

T

CBO

CEO

EBO

CE(sat)

IC = 10µA, IE = 0 100 V
IC = 1mA, IB = 0 100 V
IE = 10µA, IC = 0 15 V
VCB = 60V, IE = 0 0.1 µA
VCE = 60V, IB = 0 1.0 µA
VCE = 10V, IC = 2mA 400 2000
IC = 10mA, IB = 1mA 0.05 0.2 V

VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100KΩ, Function = FLAT

80 mV

VCB = 10V, IE = –2mA, f = 200MHz 150 MHz

1

Composite Transistors XN4556

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

V

— I

100

)

V

(

30

CE(sat)

10

0.3

0.1

0.03

CE(sat)

3

1

25˚C

Ta=75˚C

–25˚C

C

Collector to emitter saturation voltage V

0.01

0.1 0.3

1 3 10 30 100

Collector current IC (mA

)

IC/IB=10

)

CE

80

)

60

mA

(

C

40

20

Collector current I

0

012210486

I

Collector to emitter voltage VCE (V

hFE — I

1800

FE

1500

1200

900

600

300

Forward current transfer ratio h

0

0.1 0.3

Ta=75˚C

1 3 10 30 100

C

VCE=10V

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

=100µA

B

80µA
60µA

50µA
40µA

30µA

20µA

10µA

)

IC — V

60

50

)
mA

(

Ta=75˚C –25˚C

40

C

30

20

Collector current I

10

0

02.01.61.20.80.4

)

Base to emitter voltage VBE (V

200

25˚C

fT — I

BE

E

VCE=10V

VCB=10V
Ta=25˚C

)

)

160

MHz

(

T

120

80

40

Transition frequency f

0
–0.1 –0.3 –1 –3 –10 –30 –100

Emitter current IE (mA

)

Cob — V

6

CB

)

pF

(

5

ob

4

3

2

1

Collector output capacitance C

0

3 10 30 100220550

1

Collector to base voltage VCB (V

2

f=1MHz
I

=0

E

Ta=25˚C

NV — I

100

VCE=10V
G

=80dB

V

Function=FLAT
Ta=25˚C

80

)
mV

(

60

40

Noise voltage NV

20

0

0.01 0.03 0.1 0.3 1

)

Collector current IC (mA

C

Rg=100kΩ

22kΩ

5kΩ

100

80

)
mV

(

60

40

Noise voltage NV

20

0

1 3 10 30 100550220

)

NV — V

Rg=100kΩ

22kΩ

5kΩ

CE

IC=1mA

=80dB

G

V

Function=FLAT
Ta=25˚C

Collector to emitter voltage VCE (V

)