Panasonic XN04509 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4509

Silicon NPN epitaxial planer transistor

For high-frequency amplification

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SC4561 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

V

EBO

C

P

T

T

j

T

stg

50 V
50 V

5V

50 mA
200 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: AO

Internal Connection

61

5

Tr1

2

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

43

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

Collector cutoff current

Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C

I
I

V

CBO

CEO

FE

T

CBO

CEO

EBO

CE(sat)

ob

IC = 10µA, IE = 0 50 V
IC = 1mA, IB = 0 50 V
IE = 10µA, IC = 0 5 V
VCB = 10V, IE = 0 0.1 µA
VCE = 10V, IB = 0 100 µA
VCE = 10V, IC = 2mA 200 500
IC = 10mA, IB = 1mA 0.06 0.3 V
VCB = 10V, IE = –2mA, f = 200MHz 250 MHz
VCB = 10V, IE = 0, f = 1MHz 1.5 pF

1

Composite Transistors

XN4509

PT — Ta IC — V

240

)

200

mW

(

T

160

120

80

40

Total power dissipation P

0

0 16040 12080

Ambient temperature Ta (˚C

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

C

IC/IB=10

CE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

012210486

)

Collector to emitter voltage VCE (V

hFE — I

600

FE

500

400

300

Ta=75˚C
25˚C

–25˚C

Ta=25˚C

IB=300µA

250µA
200µA

150µA

100µA

50µA

)

C

VCE=10V

60

50

)
mA

(

40

C

30

20

Collector current I

10

0

01.20.2 1.00.4 0.80.6

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

IC — V

Ta=75˚C –25˚C

fT — I

BE

25˚C

E

VCE=10V

VCB=10V
Ta=25˚C

)

0.3
Ta=75˚C

25˚C

0.1

0.03

–25˚C

Collector to emitter saturation voltage V

)
pF

(

ob

0.01
13

6

5

4

3

2

1

10 30 100 300 1000

Collector current IC (mA

Cob — V

CB

f=1MHz

=0

I

E

Ta=25˚C

)

Collector output capacitance C

0

3 10 30 100

1

Collector to base voltage VCB (V

)

200

100

Forward current transfer ratio h

0

0.1 0.3

1 3 10 30 100

Collector current IC (mA

200

100

Transition frequency f

0

0.1 0.3 1 3 10 30 100

)

Emitter current IE (mA

)

2