Panasonic XN04506 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4506

NPN epitaxial planer transistor

For amplification of low frequency output

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD1915(F) × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

50 V
20 V

25 V
300 mA
500 mA
300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: EN

Internal Connection

61

5

Tr1

2

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

43

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to emitter voltage V
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Base to emitter voltage V
Transition frequency f
Collector output capacitance C
ON Resistance R

*1

Ron test circuit

IB=1mA

R

CEO

CBO

EBO

FE

V

CE(sat)

BE

T

ob

on

V

B

= ✕1000(Ω)

on

VA–V

B

*1

1kΩ

V

B

IC = 1mA, IB = 0 20 V
VCB = 50V, IE = 0 0.1 µA
VEB = 25V, IC = 0 0.1 µA
VCE = 2V, IC = 4mA 500 2500
IC = 30mA, IB = 3mA 0.1 V
VCE = 2V, IC = 4mA 0.6 V
VCB = 6V, IE = –4mA, f = 200MHz 80 MHz
VCB = 10V, IE = 0, f = 1MHz 7 pF

1.0 Ω

f=1kHz
V=0.3V

V

A

V

V

1

Composite Transistors

XN4506

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

V

— I

10

)

V

(

CE(sat)

0.1

0.01

CE(sat)

1

25˚C

C

Ta=75˚C

Collector to emitter saturation voltage V

0.001

0.1

1 10 100

Collector current IC (mA

)

IC/IB=10

–25˚C

)

CE

24

20

)
mA

(

16

C

12

8

Collector current I

4

0

012210486

Collector to emitter voltage VCE (V

hFE — I

2000

FE

1600

25˚C

1200

–25˚C

800

400

C

Ta=75˚C

Forward current transfer ratio h

0

0.1

1 10 100

Collector current IC (mA

Ta=25˚C

IB=10µA

8µA

6µA

4µA

2µA

VCE=2V

)

IC — V

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

0 1.00.80.60.40.2

)

Base to emitter voltage VBE (V

200

Ta=75˚C

fT — I

BE

E

VCE=2V

25˚C

–25˚C

VCB=6V
Ta=25˚C

)

)

160

MHz

(

T

120

80

40

Transition frequency f

0
–0.1 –1 –10 –100

Emitter current IE (mA

)

Cob — V

20

CB

)
pF

(

16

ob

12

8

4

Collector output capacitance C

0

1 10 100

Collector to base voltage VCB (V

2

f=1MHz
Ta=25˚C

)