Panasonic XN04505 Datasheet
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN4505
NPN epitaxial planer transistor
For general amplification (Tr1)
For amplification of low frequency output (Tr2)
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SD601A+2SD1328
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Tr1
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
60 V
50 V
7V
100 mA
200 mA
25 V
20 V
12 V
0.5 A
1A
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: DZ
Internal Connection
Tr1
61
5
43
Tr2
2
Unit: mm
1
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
ON Resistance R
*1
Pulse measurement
*2
Ron test circuit
IB=1mA
R
= ✕1000(Ω)
on
VA–V
V
1kΩ
V
B
V
V
B
B
CBO
CEO
EBO
I
CBO
I
CEO
FE
V
CE(sat)
T
ob
CBO
CEO
EBO
CBO
h
FE1
h
FE2
V
CE(sat)
BE(sat)
T
ob
on
f=1kHz
V=0.3V
V
A
XN4505
IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 7 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IB = 0 100 µA
VCE = 10V, IC = 2mA 160 460
IC = 100mA, IB = 10mA 0.1 0.3 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
VCB = 10V, IE = 0, f = 1MHz 3.5 pF
IC = 10µA, IE = 0 25 V
IC = 1mA, IB = 0 20 V
IE = 10µA, IC = 0 12 V
VCB = 25V, IE = 0 0.1 µA
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A
IC = 0.5A, IB = 20mA 0.13 0.4 V
IC = 0.5A, IB = 20mA 1.2 V
VCB = 10V, IE = –50mA 200 MHz
VCB = 10V, IE = 0, f = 1MHz 10 pF
*2
*1
*1
200 800
60
1.0 Ω
Common characteristics chart
PT — Ta
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
)
2
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