Panasonic XN04504 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4504

Silicon NPN epitaxial planer transistor

For amplification of low frequency output

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD1328 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage
Collector to emitter voltage

Rating

Emitter to base voltage

of
element

Collector current I
Peak collector current
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

25 V
20 V
12 V

0.5 A
1A

300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: 5X

Internal Connection

Tr1

61

5

43

Tr2

2

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
ON Resistance R

Pulse measurement
Ron test circuit

*1

*2

CBO

h
h
V

T

CBO

CEO

EBO

FE1

FE2

CE(sat)

BE(sat)

ob

*2

on

IB=1mA

V

B

R

= ✕1000(Ω)

on

VA–V

B

IC = 10µA, IE = 0 25 V
IC = 1mA, IB = 0 20 V
IE = 10µA, IC = 0 12 V
VCB = 25V, IE = 0 0.1 µA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A

*1

*1

200 800

60
IC = 500mA, IB = 20mA 0.13 0.4 V
IC = 500mA, IB = 50mA 1.2 V
VCB = 10V, IE = –50mA, f = 200MHz

200 MHz

VCB = 10V, IE = 0, f = 1MHz 10 pF

1.0 Ω

1kΩ

f=1kHz

V

B

V

V

V=0.3V

V

A

1

Composite Transistors

XN4504

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

V

— I

BE(sat)

100

)

V

(

30

BE(sat)

10

3

25˚C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.03

Ta=–25˚C

75˚C

0.1 0.3 1 3 10

Collector current IC (A

C

IC/IB=10

)

V

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0615243

)

Collector to emitter voltage VCE (V

hFE — I

1200

FE

1000

800

Ta=75˚C

600

25˚C

–25˚C

400

200

Forward current transfer ratio h

0

0.01 0.03

0.1 0.3 1 3 10

Collector current IC (A

IB=4.0mA

C

Ta=25˚C

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

)

VCE=2V

)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

0.01

0.01 0.03

Collector current IC (A

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

–1 –3 –10

Emitter current IE (mA

— I

CE(sat)

Ta=75˚C

25˚C

0.1 0.3 1 3 10

fT — I

–5 –50

–25˚C

C

E

VCB=10V
Ta=25˚C

–30

–20

IC/IB=25

)

–100–2

)

Cob — V

24

)

pF

(

20

ob

16

12

8

4

Collector output capacitance C

0

3 10 30 100220550

1

Collector to base voltage VCB (V

2

CB

f=1MHz

=0

I

E

Ta=25˚C

)