Panasonic XN04503 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4503

Silicon NPN epitaxial planer transistor

For amplification of low frequency output

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD813 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

25 V
20 V

7V

0.5 A
1A

300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: 5Y

Internal Connection

61

5

Tr1

2

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

43

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

Collector cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C

I
I
h
h
V

CBO

CEO

FE1

FE2

T

CBO

CEO

EBO

CE(sat)

BE(sat)

ob

IC = 10µA, IE = 0 25 V
IC = 1mA, IB = 0 20 V
IE = 10µA, IC = 0 7 V
VCB = 25V, IE = 0 0.1 µA
VCE = 20V, IB = 0 1 µA
VCE = 2V, IC = 500mA* 65 350
VCE = 2V, IC = 1A* 50
IC = 500mA, IB = 20mA* 0.2 0.4 V
IC = 500mA, IB = 50mA* 1.2 V
VCB = 10V, IE = –50mA, f = 200MHz

150 MHz

VCB = 10V, IE = 0, f = 1MHz 6 pF

* Pulse measurement

1

Composite Transistors

XN4503

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

V

— I

BE(sat)

100

)

V

(

30

BE(sat)

10

3

Ta=–25˚C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.03

25˚C

75˚C

0.1 0.3 1 3 10

Collector current IC (A

C

IC/IB=10

)

V

CE(sat)

Ta=75˚C

–25˚C

— I

C

IC/IB=10

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=20mA

Collector current I

0.2

18mA

16mA

CE

14mA

12mA

10mA

8mA

Ta=25˚C

6mA

4mA

2mA

100

)

V

(

30

CE(sat)

10

0.3

0.1

0.03

3

1

25˚C

Collector to emitter saturation voltage V

0

02.00.4 0.8 1.61.2

)

Collector to emitter voltage VCE (V

hFE — I

600

FE

500

400

Ta=75˚C

300

25˚C

–25˚C

200

100

Forward current transfer ratio h

0

0.01 0.03

0.1 0.3 1 3 10

C

Collector current IC (A

)

VCE=2V

)

0.01

0.01 0.03

0.1 0.3 1 3 10

Collector current IC (A

fT — I

240

VCB=10V
f=100MHz
Ta=25˚C

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

–3 –10

–1

–5 –50

Emitter current IE (mA

)

E

–30

–20

–100–2

)

Cob — V

24

CB

)

pF

(

20

ob

16

12

8

4

Collector output capacitance C

0

3 10 30 100220550

1

Collector to base voltage VCB (V

2

f=1MHz

=0

I

E

Ta=25˚C

)