Panasonic XN04502 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4502

Silicon NPN epitaxial planer transistor

For general amplification

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD602A × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage
Collector to emitter voltage

Rating
of

Emitter to base voltage

element

Collector current I
Peak collector current
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

60 V
50 V

5V

0.5 A
1A

300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: 5Q

Internal Connection

Tr1

61

5

43

Tr2

2

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I

Forward current transfer ratio

Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C

CBO

h
h
V

T

CBO

CEO

EBO

FE1

FE2

CE(sat)

ob

IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 5 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IC = 150mA* 85 340
VCE = 10V, IC = 500mA* 40
IC = 300mA, IB = 30mA* 0.35 0.6 V
VCB = 10V, IE = –50mA, f = 200MHz

200 MHz

VCB = 10V, IE = 0, f = 1MHz 6 15 pF

* Pulse measurement

1

Composite Transistors

XN4502

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

0.01

0.01 0.03

Ta=75˚C

25˚C

–25˚C

0.1 0.3 1 3 10

Collector current IC (A

)

C

IC/IB=10

)

CE

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

IB=10mA

0

02048 1612

9mA

8mA

7mA

Ta=25˚C

6mA

5mA

4mA

3mA

2mA

1mA

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)

V

(

30

BE(sat)

10

3

25˚C

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.03

Ta=–25˚C

75˚C

0.1 0.3 1 3 10

Collector current IC (A

C

IC/IB=10

)

IC — I

B

800

700

)

600

mA

(

C

500

400

300

200

Collector current I

100

0

0108642

)

Base current IB (mA

hFE — I

300

FE

250

Ta=75˚C

200

25˚C

–25˚C

150

100

50

Forward current transfer ratio h

0

0.01 0.03

0.1 0.3 1 3 10

Collector current IC (A

C

VCE=10V
Ta=25˚C

)

VCE=10V

)

240

)

200

MHz

(

160

T

120

80

40

Transition frequency f

0

–3 –10

–1

–5 –50

Emitter current IE (mA

2

fT — I

E

–20

VCB=10V
Ta=25˚C

–30

Cob — V

12

)
pF

(

10

ob

8

6

4

2

Collector output capacitance C

–100–2

)

0

3 10 30 1002 5 20 50

1

Collector to base voltage VCB (V

CB

f=1MHz

=0

I

E

Ta=25˚C

120

)

V

(

100

CER

80

60

40

20

Collector to emitter voltage V

)

V

— R

CER

0

1310 30 100 300 1000

BE

IC=2mA
Ta=25˚C

Base to emitter resistance RBE (kΩ

)