Panasonic XN04482 Datasheet
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN4482
Silicon PNP epitaxial planer transistor
For general amplification
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SB709+2SB710
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Tr1
Tr2
Overall
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
–60 V
–50 V
–7 V
–100 mA
–200 mA
–60 V
–50 V
–5 V
–500 mA
–1 A
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: ON
Internal Connection
61
5
43
Tr1
2
Tr2
Unit: mm
1
Composite Transistors XN4482
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
I
I
V
h
h
V
CBO
CEO
FE
T
CBO
FE1
FE2
T
CBO
CEO
EBO
CE(sat)
ob
CBO
CEO
EBO
CE(sat)
BE(sat)
ob
IC = –10µA, IE = 0 –60 V
IC = –2mA, IB = 0 –50 V
IE = –10µA, IC = 0 –7 V
VCB = –20V, IE = 0 – 0.1 µA
VCE = –10V, IB = 0 –100 µA
VCE = –10V, IC = –2mA 160 460
IC = –100mA, IB = –10mA – 0.3 – 0.5 V
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
VCB = –10V, IE = 0, f = 1MHz 2.7 pF
IC = –10µA, IE = 0 –60 V
IC = –2mA, IB = 0 –50 V
IE = –10µA, IC = 0 –5 V
VCB = –20V, IE = 0 – 0.1 µA
VCE = –10V, IC = –150mA* 85 340
VCE = –10V, IC = –500mA* 40
IC = –300mA, IB = –30mA* – 0.35 – 0.6 V
IC = –300mA, IB = –30mA* –1.1 –1.5 V
VCB = –10V, IE = 1mA, f = 200MHz 200 MHz
VCB = –10V, IE = 0, f = 1MHz 5 15 pF
* Pulse measurement
Common characteristics chart
— Ta
P
T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
2
)
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