Panasonic XN04404 Datasheet
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN4404
Silicon PNP epitaxial planer transistor
For general amplification
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SB970 × 2 elements
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Rating
of
element
Overall
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
–15 V
–10 V
–7 V
– 0.5 A
–1 A
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: CV
Internal Connection
61
5
Tr1
2
Unit: mm
Electrical Characteristics (Ta=25˚C)
■
43
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
h
h
V
CBO
FE1
FE2
T
CBO
CEO
EBO
CE(sat)
BE(sat)
ob
IC = –10µA, IE = 0 –15 V
IC = –1mA, IB = 0 –10 V
IE = –10µA, IC = 0 –7 V
VCB = –10V, IE = 0 – 0.1 µA
VCE = –2V, IC = –500mA* 100 350
VCE = –2V, IC = –1A* 60
IC = –400mA, IB = –8mA* – 0.16 – 0.3 V
IC = –400mA, IB = –8mA* –0.8 –1.2 V
VCB = –10V, IE = 50mA, f = 200MHz
130 MHz
VCB = –10V, IE = 0, f = 1MHz 22 pF
*Pulse measurement
1
Composite Transistors
XN4404
PT — Ta IC — V
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
V
— I
–100
)
V
(
–30
CE(sat)
–10
–3
–0.3
–0.1
–0.03
CE(sat)
–1
Ta=75˚C
25˚C
C
–25˚C
Collector to emitter saturation voltage V
–0.01
–0.01 –0.03
–0.1 –0.3 –1 –3 –10
Collector current IC (A
)
IC/IB=50
)
CE
–1.2
IB=–10mA
)
A
(
C
–1.0
–0.8
–0.6
–0.4
Collector current I
–0.2
0
0–6–1 –5–2 –4–3
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
Ta=75˚C
25˚C
300
–25˚C
200
100
Forward current transfer ratio h
0
–0.01 –0.03
–0.1 –0.3 –1 –3 –10
C
VCE=–2V
Collector current IC (A
Ta=25˚C
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
)
V
— I
BE(sat)
–100
)
V
(
–30
BE(sat)
–10
–3
25˚C
–1
–0.3
–0.1
–0.03
Base to emitter saturation voltage V
–0.01
–0.01 –0.03
)
Ta=–25˚C
75˚C
–0.1 –0.3 –1 –3 –10
Collector current IC (A
fT — I
200
E
C
VCB=–10V
Ta=25˚C
IC/IB=50
)
)
160
MHz
(
T
120
80
40
Transition frequency f
0
1 3 10 30 100220550
Emitter current IE (mA
)
Cob — V
80
CB
)
pF
70
(
ob
60
50
40
30
20
10
Collector output capacitance C
0
–1
–3 –10
–5 –50
–20
Collector to base voltage VCB (V
2
f=1MHz
I
E
Ta=25˚C
–30
=0
–100–2
)
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