Panasonic XN04402 Datasheet
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN4402
Silicon PNP epitaxial planer transistor
For general amplification
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SB710 × 2 elements
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
–60 V
–50 V
–5 V
– 0.5 A
–1 A
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: OH
Internal Connection
Tr1
61
5
43
Tr2
2
Unit: mm
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
CBO
h
h
V
T
CBO
CEO
EBO
FE1
FE2
CE(sat)
BE(sat)
ob
IC = –10µA, IE = 0 –60 V
IC = –2mA, IB = 0 –50 V
IE = –10µA, IC = 0 –5 V
VCB = –20V, IE = 0 – 0.1 µA
VCE = –10V, IC = –150mA* 85 340
VCE = –10V, IC = –500mA* 40
IC = –300mA, IB = –30mA* – 0.35 – 0.6 V
IC = –300mA, IB = –30mA* –1.1 –1.5 V
VCB = –10V, IE = 50mA, f = 200MHz
200 MHz
VCB = –10V, IE = 0, f = 1MHz 6 15 pF
*Pulse measurement
1
Composite Transistors XN4402
PT — Ta IC — V
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
V
— I
CE(sat)
–10
)
V
(
–3
CE(sat)
–1
–0.3
–0.1
–0.03
–0.01
–0.003
Collector to emitter saturation voltage V
–0.001
–1 –3
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
C
IC/IB=10
)
CE
–800
–700
)
–600
mA
(
C
–500
–400
–300
–200
Collector current I
–100
IB=–10mA
0
0–20–4 –8 –16–12
–9mA
–8mA
–7mA
Ta=25˚C
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
Collector to emitter voltage VCE (V
V
— I
BE(sat)
–100
)
V
(
–30
BE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Base to emitter saturation voltage V
–0.01
–1 –3
Ta=–25˚C
–10 –30 –100 –300 –1000
C
IC/IB=10
25˚C
75˚C
Collector current IC (mA
IC — I
B
–800
–700
)
–600
mA
(
C
–500
–400
–300
–200
Collector current I
–100
0
0 –10–8–6–4–2
)
Base current IB (mA
hFE — I
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
)
Ta=75˚C
25˚C
–25˚C
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
C
VCE=–10V
Ta=25˚C
)
VCE=–10V
)
240
)
200
MHz
(
T
160
120
80
40
Transition frequency f
0
3 10 30 100220550
1
Emitter current IE (mA
2
fT — I
E
VCB=–10V
Ta=25˚C
)
Cob — V
24
)
pF
(
20
ob
16
12
8
4
CB
Collector output capacitance C
0
–1
–3 –10
–5 –50
–20
–30
Collector to base voltage VCB (V
f=1MHz
I
=0
E
Ta=25˚C
V
— R
)
V
(
CER
CER
–120
–100
–80
–60
–40
–20
BE
IC=–2mA
Ta=25˚C
Collector to emitter voltage V
0
–100–2
)
1310 30 100 300 1000
Base to emitter resistance RBE (kΩ
)
Loading...