Panasonic XN04390 Technical data
查询XN04390供应商
Composite Transistors
XN04390
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For digital circuit
For switching
■ Features
•
Two elements incorporated into one package.
(Transistor with built-in resistor)
• Reduction of the mounting area ad assembly cost by one half.
■ Basic Part Number of Element
•
UNR212X (UN212X) + UNR2223 (UN2223)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Tr1 Collector to emitter voltage V
Collector current I
Collector to base voltage V
Tr2 Collector to emitter voltage V
Collector current I
Total power dissipation P
Overall Junction temperature T
Storage temperature T
CBO
CEO
C
CBO
CEO
C
T
j
stg
50 V
50 V
500 mA
−50 V
−50 V
−500 mA
300 mW
150 °C
−55 to +150 °C
+0.20
2.90
–0.05
1.9±0.1
(0.95)
(0.95)
654
+0.2
–0.3
+0.25
–0.05
2.8
1.50
132
+0.10
0.30
–0.05
+0.10
0.50
–0.05
10°
1: Collector (Tr1) 4: Collector (Tr2)
2: Base (Tr2) 5: Base (Tr1)
3: Emitter (Tr2) 6: Emitter (Tr1)
EIAJ: SC-74 Mini6-G1 Type Package
(0.65)
+0.2
–0.1
1.1
0 to 0.1
+0.3
–0.1
1.1
Unit: mm
+0.10
0.16
–0.06
5°
Marking Symbol: DY
Internal Connection
Tr1
6
5
4
Tr2
1
2
3
±0.2
0.4
Note) The part number in the parenthesis shows conventional part number.
1
XN04390 Composite Transistors
■ Electorical Caracteristics Ta = 25°C ± 3°C
• Tr1
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage V
High-level output voltage V
Low-level output voltage V
Input resistance R
Resistance ratio R1/R
Transition frequency f
• Tr2
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage V
High-level output voltage V
Low-level output voltage V
Input resistance R
Resistance ratio R1/R
Transition frequency f
CBO
CEO
CBO
I
CEO
EBO
FE
CE(sat)
OH
OL
T
CBO
CEO
CBO
I
CEO
EBO
FE
CE(sat)
OH
OL
T
IC = 10 µA, IE = 050 V
IC = 2 mA, IB = 050V
VCB = 50 V, IE = 01µA
VCE = 50 V, IB = 01µA
VEB = 6 V, IC = 01mA
VCE = 10 V, IC = 100 mA 60
IC = 100 mA, IB = 5 mA 0.25 V
VCC = 5 V, VB = 0.5 V, RL = 500 Ω 4.9 V
VCC = 5 V, VB = 3.5 V, RL = 500 Ω 0.2 V
1
2
−30% 10 +30% kΩ
0.8 1.0 1.2
VCB = 10 V, IE = −50 mA, f = 200MHz 200 MHz
IC = −10 µA, IE = 0 −50 V
IC = −2 mA, IB = 0 −50 V
VCB = −50 V, IE = 0 − 0.1 µA
VCE = −50 V, IB = 0 − 0.5 µA
VEB = −6 V, IC = 0 −2.0 mA
VCE = −10 V, IC = −100 mA 20
IC = −10 mA, IB = − 0.3 mA − 0.25 V
VCC = −5 V, VB = − 0.5 V, RL = 500 Ω−4.9 V
VCC = −5 V, VB = −3.5 V, RL = 500 Ω− 0.2 V
1
2
−30% 0.27 +30% kΩ
0.043 0.054 0.065
VCB = −10 V, IE = 50 mA, f = 200MHz 200 MHz
2
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