Panasonic XN04390 Technical data

XN04390

Composite Transistors

XN04390

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)

For digital circuit

For switching

■ Features

•Two elements incorporated into one package. (Transistor with built-in resistor)

•Reduction of the mounting area ad assembly cost by one half.

■ Basic Part Number of Element

• UNR212X (UN212X) + UNR2223 (UN2223)

■ Absolute Maximum Ratings Ta = 25°C

	Parameter	Symbol	Rating	Unit
	Collector to base voltage	VCBO	50	V
Tr1	Collector to emitter voltage	VCEO	50	V
	Collector current	IC	500	mA
	Collector to base voltage	VCBO	−50	V
Tr2	Collector to emitter voltage	VCEO	−50	V
	Collector current	IC	−500	mA
	Total power dissipation	PT	300	mW
Overall	Junction temperature	Tj	150	°C
	Storage temperature	Tstg	−55 to +150	°C

	2.90–0.05+0.20				Unit: mm
					0.16–0.06+0.10
	1.9±0.1
	(0.95)	(0.95)
4	5	6
		+0.25	–0.05	+0.2	–0.3	0.4±0.2
3	2	1.50		2.8 5°
		1
0.30–0.05+0.10		(0.65)
0.50–0.05+0.10
10°
		+0.2 –0.1		+0.3 –0.1
		1.1		1.1
		0 to 0.1
1: Collector (Tr1)				4: Collector (Tr2)
2: Base (Tr2)				5: Base (Tr1)
3: Emitter (Tr2)				6: Emitter (Tr1)
EIAJ: SC-74			Mini6-G1 Type Package

Marking Symbol: DY

Internal Connection

6	Tr1	1
5		2
4	Tr2	3

Note) The part number in the parenthesis shows conventional part number.

1

XN04390			Composite Transistors
■ Electorical Caracteristics	Ta = 25°C ± 3°C
• Tr1
Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector to base voltage	VCBO	IC = 10 µA, IE = 0	50			V
Collector to emitter voltage	VCEO	IC = 2 mA, IB = 0	50			V
Collector cutoff current	ICBO	VCB = 50 V, IE = 0			1	µA
	ICEO	VCE = 50 V, IB = 0			1	µA
Emitter cutoff current	IEBO	VEB = 6 V, IC = 0			1	mA
Forward current transfer ratio	hFE	VCE = 10 V, IC = 100 mA	60
Collector to emitter saturation voltage	VCE(sat)	IC = 100 mA, IB = 5 mA			0.25	V
High-level output voltage	VOH	VCC = 5 V, VB = 0.5 V, RL = 500 Ω	4.9			V
Low-level output voltage	VOL	VCC = 5 V, VB = 3.5 V, RL = 500 Ω			0.2	V
Input resistance	R1		−30%	10	+30%	kΩ
Resistance ratio	R1/R2		0.8	1.0	1.2
Transition frequency	fT	VCB = 10 V, IE = −50 mA, f = 200MHz		200		MHz
• Tr2
Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector to base voltage	VCBO	IC = −10 µA, IE = 0	−50			V
Collector to emitter voltage	VCEO	IC = −2 mA, IB = 0	−50			V
Collector cutoff current	ICBO	VCB = −50 V, IE = 0			− 0.1	µA
	ICEO	VCE = −50 V, IB = 0			− 0.5	µA
Emitter cutoff current	IEBO	VEB = −6 V, IC = 0			−2.0	mA
Forward current transfer ratio	hFE	VCE = −10 V, IC = −100 mA	20
Collector to emitter saturation voltage	VCE(sat)	IC = −10 mA, IB = − 0.3 mA			− 0.25	V
High-level output voltage	VOH	VCC = −5 V, VB = − 0.5 V, RL = 500 Ω	−4.9			V
Low-level output voltage	VOL	VCC = −5 V, VB = −3.5 V, RL = 500 Ω			− 0.2	V
Input resistance	R1		−30%	0.27	+30%	kΩ
Resistance ratio	R1/R2		0.043	0.054	0.065
Transition frequency	fT	VCB = −10 V, IE = 50 mA, f = 200MHz		200		MHz

2